검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Consistent low-field mobility modeling for advanced MOS devices Stanojevic Z, Baumgartner O, Filipovic L, Kosina H, Karner M, Kernstock C, Prause P Solid-State Electronics, 112, 37, 2015 |
| 2 |
Subband splitting and surface roughness induced spin relaxation in (001) silicon SOI MOSFETs Osintsev D, Baumgartner O, Stanojevic Z, Sverdlov V, Selberherr S Solid-State Electronics, 90, 34, 2013 |
| 3 |
Bandstructure and mobility variations in p-type silicon nanowires under electrostatic gate field Neophytou N, Baumgartner O, Stanojevic Z, Kosina H Solid-State Electronics, 90, 44, 2013 |
| 4 |
Subband engineering in n-type silicon nanowires using strain and confinement Stanojevic Z, Sverdlov V, Baumgartner O, Kosina H Solid-State Electronics, 70, 73, 2012 |
| 5 |
Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels Osintsev D, Sverdlov V, Stanojevic Z, Makarov A, Selberherr S Solid-State Electronics, 71, 25, 2012 |