| 1 |
Analysis of electrical characteristics and proposal of design guide for ultra-scaled nanoplate vertical FET and 6T-SRAM
Seo Y, Kim S, Ko K, Woo C, Kim M, Lee J, Kang M, Shin H
Solid-State Electronics, 140, 69, 2018 |
| 2 |
Comparison of work function variation between FinFET and 3D stacked nanowire FET devices for 6-T SRAM reliability
Ko K, Son D, Kang M, Shin H
Solid-State Electronics, 140, 74, 2018 |
| 3 |
Analysis of static noise margin improvement for low voltage SRAM composed of nano-scale MOSFETs with ideal subthreshold factor and small variability
Tanaka C, Saitoh M, Ota K, Numata T
Solid-State Electronics, 109, 58, 2015 |
| 4 |
Cell libraries for robust low-voltage operation in nanometer technologies
Gemmeke T, Ashouei M, Liu B, Meixner M, Noll TG, de Groot H
Solid-State Electronics, 84, 132, 2013 |
| 5 |
V-DD scalability of FinFET SRAMs: Robustness of different design options against LER-induced variations
Baravelli E, De Marchi L, Speciale N
Solid-State Electronics, 54(9), 909, 2010 |
| 6 |
Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells
Cheng B, Roy S, Roy G, Adamu-Lema F, Asenov A
Solid-State Electronics, 49(5), 740, 2005 |
