| 1 |
Fe-N-x/C assisted chemical mechanical polishing for improving the removal rate of sapphire
Xu L, Zou CL, Shi XL, Pan GS, Luo GH, Zhou Y
Applied Surface Science, 343, 115, 2015 |
| 2 |
Characterization of colloidal silica abrasives with different sizes and their chemical-mechanical polishing performance on 4H-SiC (0 0 0 1)
Shi XL, Pan GS, Zhou Y, Gu ZH, Gong H, Zou CL
Applied Surface Science, 307, 414, 2014 |
| 3 |
Extended study of the atomic step-terrace structure on hexagonal SiC (0001) by chemical-mechanical planarization
Shi XL, Pan GS, Zhou Y, Zou CL, Gong H
Applied Surface Science, 284, 195, 2013 |
| 4 |
Effects of plasma treatment on evolution of surface step-terrace structure of critically cleaned c-plane sapphire substrates: An AFM study
Zhang D, Gan Y
Applied Surface Science, 285, 211, 2013 |
| 5 |
Active sites for the oxygen reduction reaction on the high index planes of Pt
Hoshi N, Nakamura M, Hitotsuyanagi A
Electrochimica Acta, 112, 899, 2013 |
| 6 |
Direct observation of two-dimensional growth at SiO2/Si(111) interface
Hojo D, Tokuda N, Yamabe K
Thin Solid Films, 515(20-21), 7892, 2007 |
| 7 |
Evolution of step-terrace structure at Si-SiO2 interface in SIMOX substrate during annealing
Ishiyama T, Nagase M, Omura Y
Applied Surface Science, 190(1-4), 16, 2002 |
| 8 |
Precipitate-free epitaxy of YBa2Cu3O7-delta by atomic control of step arrays on vicinal SrTiO3 (100) substrates
Nie JC, Koyanagi M, Shoji A
Applied Surface Science, 172(3-4), 207, 2001 |
| 9 |
RHEED study of atomic steps on ZnSe surface growing on vicinal GaAs substrates
Abe H, Kanemaru M, Egawa T, Nabetani Y, Kato T, Matsumoto T
Journal of Crystal Growth, 214, 595, 2000 |
