화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Influence of UDMHy on GaAs (001) surface reconstruction before and during growth of Ga(NAs) by MOVPE
Massmeyer O, Sterzer E, Nattermann L, Stolz W, Volz K
Applied Surface Science, 458, 512, 2018
2 MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%
Nattermann L, Beyer A, Ludewig P, Hepp T, Sterzer E, Volz K
Journal of Crystal Growth, 463, 151, 2017
3 Exploiting strain to enhance the Si incorporation in GaAs-based III/V semiconductors using MOVPE
Nattermann L, Ludewig P, Sterzer E, Volz K
Journal of Crystal Growth, 470, 15, 2017
4 (GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA)
Sterzer E, Ringler B, Nattermann L, Beyer A, von Hanisch C, Stolz W, Volz K
Journal of Crystal Growth, 467, 132, 2017
5 Efficient nitrogen incorporation in GaAs using novel metal organic As-N precursor di-tertiary-butyl-arsano-amine (DTBAA)
Sterzer E, Beyer A, Duschek L, Nattermann L, Ringler B, Leube B, Stegmuller A, Tonner R, von Hanisch C, Stolz W, Volz K
Journal of Crystal Growth, 439, 19, 2016
6 Novel nitrogen/gallium precursor [Ga(bdma)H-2] for MOVPE
Sterzer E, Beyer A, Nattermann L, Schorn W, Schlechter K, Pulz S, Sundermeyer J, Stolz W, Volz K
Journal of Crystal Growth, 454, 173, 2016
7 Investigation of the microstructure of metallic droplets on Ga(AsBi)/GaAs
Sterzer E, Knaub N, Ludewig P, Straubinger R, Beyer A, Volz K
Journal of Crystal Growth, 408, 71, 2014