검색결과 : 7건
No. | Article |
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1 |
Influence of UDMHy on GaAs (001) surface reconstruction before and during growth of Ga(NAs) by MOVPE Massmeyer O, Sterzer E, Nattermann L, Stolz W, Volz K Applied Surface Science, 458, 512, 2018 |
2 |
MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8% Nattermann L, Beyer A, Ludewig P, Hepp T, Sterzer E, Volz K Journal of Crystal Growth, 463, 151, 2017 |
3 |
Exploiting strain to enhance the Si incorporation in GaAs-based III/V semiconductors using MOVPE Nattermann L, Ludewig P, Sterzer E, Volz K Journal of Crystal Growth, 470, 15, 2017 |
4 |
(GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA) Sterzer E, Ringler B, Nattermann L, Beyer A, von Hanisch C, Stolz W, Volz K Journal of Crystal Growth, 467, 132, 2017 |
5 |
Efficient nitrogen incorporation in GaAs using novel metal organic As-N precursor di-tertiary-butyl-arsano-amine (DTBAA) Sterzer E, Beyer A, Duschek L, Nattermann L, Ringler B, Leube B, Stegmuller A, Tonner R, von Hanisch C, Stolz W, Volz K Journal of Crystal Growth, 439, 19, 2016 |
6 |
Novel nitrogen/gallium precursor [Ga(bdma)H-2] for MOVPE Sterzer E, Beyer A, Nattermann L, Schorn W, Schlechter K, Pulz S, Sundermeyer J, Stolz W, Volz K Journal of Crystal Growth, 454, 173, 2016 |
7 |
Investigation of the microstructure of metallic droplets on Ga(AsBi)/GaAs Sterzer E, Knaub N, Ludewig P, Straubinger R, Beyer A, Volz K Journal of Crystal Growth, 408, 71, 2014 |