검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Site-specific SIMS backside analysis Gu C, Garcia R, Pivovarov A, Stevie F, Griffis D Applied Surface Science, 231-2, 663, 2004 |
| 2 |
O-2(+) versus Cs+ for high depth resolution depth profiling of III-V nitride-based semiconductor devices Kachan M, Hunter J, Kouzminov D, Pivovarov A, Gu J, Stevie F, Griffis D Applied Surface Science, 231-2, 684, 2004 |
| 3 |
Utilization of electron impact ionization of gaseous and sputtered species in the secondary ion acceleration region of a magnetic sector SIMS instrument Pivovarov A, Gu C, Stevie F, Griffis D Applied Surface Science, 231-2, 781, 2004 |
| 4 |
Secondary ion mass spectrometry backside analysis of barrier layers for copper diffusion Gu C, Pivovarov A, Garcia R, Stevie F, Griffis D, Moran J, Kulig L, Richards JF Journal of Vacuum Science & Technology B, 22(1), 350, 2004 |
| 5 |
Secondary ion mass spectrometry characterization of the diffusion properties of 17 elements implanted into silicon Francois-St-Cyr H, Anoshkina E, Stevie F, Chow L, Richardson K, Zhou D Journal of Vacuum Science & Technology B, 19(5), 1769, 2001 |