화학공학소재연구정보센터
검색결과 : 48건
No. Article
1 Influence of UDMHy on GaAs (001) surface reconstruction before and during growth of Ga(NAs) by MOVPE
Massmeyer O, Sterzer E, Nattermann L, Stolz W, Volz K
Applied Surface Science, 458, 512, 2018
2 GaP-interlayer formation on epitaxial GaAs(100) surfaces in MOVPE ambient
Doscher H, Hens P, Beyer A, Tapfer L, Volz K, Stolz W
Journal of Crystal Growth, 464, 2, 2017
3 MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications
Fuchs C, Beyer A, Volz K, Stolz W
Journal of Crystal Growth, 464, 201, 2017
4 Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (001) substrates
Ludewig P, Diederich M, Jandieri K, Stolz W
Journal of Crystal Growth, 467, 61, 2017
5 (GaIn)(NAs) growth using di-tertiary-butyl-arsano-amine (DTBAA)
Sterzer E, Ringler B, Nattermann L, Beyer A, von Hanisch C, Stolz W, Volz K
Journal of Crystal Growth, 467, 132, 2017
6 MOVPE growth studies of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures (MQWH) for the monolithic integration of laser structures on (001) Si-substrates
Ludewig P, Reinhard S, Jandieri K, Wegele T, Beyer A, Tapfer L, Volz K, Stolz W
Journal of Crystal Growth, 438, 63, 2016
7 Efficient nitrogen incorporation in GaAs using novel metal organic As-N precursor di-tertiary-butyl-arsano-amine (DTBAA)
Sterzer E, Beyer A, Duschek L, Nattermann L, Ringler B, Leube B, Stegmuller A, Tonner R, von Hanisch C, Stolz W, Volz K
Journal of Crystal Growth, 439, 19, 2016
8 Novel nitrogen/gallium precursor [Ga(bdma)H-2] for MOVPE
Sterzer E, Beyer A, Nattermann L, Schorn W, Schlechter K, Pulz S, Sundermeyer J, Stolz W, Volz K
Journal of Crystal Growth, 454, 173, 2016
9 Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing
Woscholski R, Shakfa MK, Gies S, Wiemer M, Rahimi-Iman A, Zimprich M, Reinhard S, Jandieri K, Baranovskii SD, Heimbrodt W, Volz K, Stolz W, Koch M
Thin Solid Films, 613, 55, 2016
10 MOVPE growth of Ga(AsBi)/GaAs using different metalorganic precursors
Nattermann L, Ludewig P, Meckbach L, Ringler B, Keiper D, von Hanisch C, Stolz W, Volz K
Journal of Crystal Growth, 426, 54, 2015