검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates Storm DF, Hardy MT, Katzer DS, Nepal N, Downey BP, Meyer DJ, McConkie TO, Zhou L, Smith DJ Journal of Crystal Growth, 456, 121, 2016 |
| 2 |
Effect of interfacial oxygen on the microstructure of MBE-grown homoepitaxial N-polar GaN Storm DF, McConkie T, Katzer DS, Downey BP, Hardy MT, Meyer DJ, Smith DJ Journal of Crystal Growth, 409, 14, 2015 |
| 3 |
Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates Hardy MT, Storm DF, Nepal N, Katzer DS, Downey BP, Meyer DJ Journal of Crystal Growth, 425, 119, 2015 |
| 4 |
Optical and magnetic resonance studies of Be-doped GaN bulk crystals Glaser ER, Freitas JA, Storm DF, Teisseyre H, Bockowski M Journal of Crystal Growth, 403, 119, 2014 |
| 5 |
Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates Storm DF, Deen DA, Katzer DS, Meyer DJ, Binari SC, Gougousi T, Paskova T, Preble EA, Evans KR, Smith DJ Journal of Crystal Growth, 380, 14, 2013 |
| 6 |
Electrical characterization of Schottky contacts to N-polar GaN Downey BP, Meyer DJ, Katzer DS, Storm DF, Binari SC Solid-State Electronics, 86, 17, 2013 |
| 7 |
Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates Zhou L, Storm DF, Katzer DS, Meyer DJ, Smith DJ Journal of Crystal Growth, 357, 25, 2012 |
| 8 |
Dependence of ohmic contact resistance on barrier thickness of AlN/GaN HEMT structures Deen DA, Storm DF, Katzer DS, Meyer DJ, Binari SC Solid-State Electronics, 54(6), 613, 2010 |
| 9 |
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures Storm DF, Katzer DS, Deen DA, Bass R, Meyer DJ, Roussos JA, Binari SC, Paskova T, Preble EA, Evans KR Solid-State Electronics, 54(11), 1470, 2010 |
| 10 |
AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization Storm DF, Katzer DS, Roussos JA, Mittereder JA, Bass R, Binari SC, Hanser D, Preble EA, Evans KR Journal of Crystal Growth, 301, 429, 2007 |