검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions Wellmann PJ, Straubinger TL, Desperrier P, Muller R, Kunecke U, Sakwe SA, Schmitt H, Winnacker A, Blanquet E, Dedulle JM, Pons M Materials Science Forum, 483, 25, 2005 |
| 2 |
Aluminum p-type doping of silicon carbide crystals using a modified physical vapor transport growth method Straubinger TL, Bickermann M, Weingartner R, Wellmann PJ, Winnacker A Journal of Crystal Growth, 240(1-2), 117, 2002 |
| 3 |
'In situ synthesis' of source material from elemental Si and C during SiCPVT growth process and characterization using digital X-ray imaging Wellmann PJ, Herro Z, Straubinger TL, Winnacker A Materials Science Forum, 389-3, 91, 2002 |
| 4 |
Incorporation of boron and the role of nitrogen as a compensation source in SiC bulk crystal growth Bickermann M, Weingartner R, Hofmann D, Straubinger TL, Winnacker A Materials Science Forum, 389-3, 127, 2002 |
| 5 |
Aluminum doping of 6H-and 4H-SiC with a modified PVT growth method Straubinger TL, Bickermann M, Rasp M, Weingartner R, Wellmann PJ, Winnacker A Materials Science Forum, 389-3, 131, 2002 |
| 6 |
On the preparation of vanadium-doped semi-insulating SiC bulk crystals Bickermann M, Hofmann D, Straubinger TL, Weingartner R, Winnacker A Materials Science Forum, 389-3, 139, 2002 |
| 7 |
Preparation of semi-insulating silicon carbide by vanadium doping during PVT bulk crystal growth Bickermann M, Hofmann D, Straubinger TL, Weingartner R, Winnacker A Materials Science Forum, 433-4, 51, 2002 |
| 8 |
PVT growth of p-type and semi-insulating 2-inch 6H-SiC crystals Rasp M, Straubinger TL, Schmitt E, Bickermann M, Reshanov S, Sadowski H Materials Science Forum, 433-4, 55, 2002 |
| 9 |
On the preparation of semi-insulating SiC bulk crystals by the PVT technique Bickermann M, Hofmann D, Straubinger TL, Weingartner R, Wellmann PJ, Winnacker A Applied Surface Science, 184(1-4), 84, 2001 |
| 10 |
Impact of source material on silicon carbide vapor transport growth process Wellmann PJ, Hofmann D, Kadinski L, Selder M, Straubinger TL, Winnacker A Journal of Crystal Growth, 225(2-4), 312, 2001 |