검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Comparative study of 4H-SiC irradiated with neutrons and heavy ions Kalinina E, Kholuyanov G, Onushkin G, Davydov D, Strel'chuk A, Konstantinov A, Hallen A, Skuratov V, Kuznetsov A Materials Science Forum, 483, 377, 2005 |
| 2 |
Electrical study of fast neutron irradiated devices based on 4H-SiC CVD epitaxial layers Kalinina E, Kholuyanov G, Strel'chuk A, Davydov D, Hallen A, Konstantinov A, Nikiforov A Materials Science Forum, 457-460, 705, 2004 |
| 3 |
Ion implantation - Tool for fabrication of advanced 4H-SiC devices Kalinina EV, Kholujanov G, Gol'dberg Y, Blank T, Onushkin G, Strel'chuk A, Violina G, Kossov V, Yafaev R, Hallen A, Konstantinov A Materials Science Forum, 389-3, 835, 2002 |
| 4 |
Electrical and optical study of 4H-SiC CVD epitaxial layers irradiated with swift heavy ions Kalinina E, Kholujanov G, Onushkin G, Davydov D, Strel'chuk A, Zubrilov A, Hallen A, Konstantinov A, Skuratov V, Stano J Materials Science Forum, 433-4, 467, 2002 |
| 5 |
Influence of ion implantation on the quality of 4H-SiC CVD epitaxial layers Kalinina E, Kholujanov G, Solov'ev V, Strel'chuk A, Kossov V, Yafaev R, Kovarskii, Shchukarev A, Obyden S, Saparin G, Ivannikov P, Hallen A, Konstantinov A Applied Surface Science, 184(1-4), 323, 2001 |
| 6 |
Fabrication and electrical characterization of 4H-SiC p(+)-n-n(+) diodes with low differential resistance Vassilevski K, Zekentes K, Constantinidis G, Strel'chuk A Solid-State Electronics, 44(7), 1173, 2000 |