검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Investigation of n-GaN/p-SiC/n-SiC heterostructures Lebedev AA, Ledyaev OY, Strel'chuk AM, Kuznetsov AN, Nikolaev AE, Zubrilov AS, Volkova AA Journal of Crystal Growth, 300(1), 239, 2007 |
| 2 |
Influence of gamma-ray and neutron irradiation on injection characteristics of 4H-SiC pn structures Strel'chuk AM, Kalinina EV, Konstantinov AO, Hallen A Materials Science Forum, 483, 993, 2005 |
| 3 |
High-quality 3C-SiC pn-structures created by sublimation epitaxy on a 6H-SIC substrate Strel'chuk AM, Lebedev AA, Kuznetsov AN, Savkina NS, Soloviev VA Materials Science Forum, 457-460, 1057, 2004 |
| 4 |
Characteristics of 6H-SiC bipolar JTE diodes realized by sublimation epitaxy and Al implantation Strel'chuk AM, Lebedev AA, Davydov DV, Savkina NS, Kuznetsov AN, Valakh MY, Kiselev VS, Romanyuk BN, Raynaud C, Chante JP, Locatelli ML Materials Science Forum, 457-460, 1133, 2004 |
| 5 |
p-3C-SiC/n-6H-SiC heterojunctions: Structural and electrical Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Soloviev VA, Poletaev NK Materials Science Forum, 389-3, 683, 2002 |
| 6 |
Characterization of 3C-SiC/6H-SiC heterostructures grown by vacuum sublimation Savkina NS, Strel'chuk AM, Sorokin LM, Mosina GN, Tregubova AS, Solov'ev VV, Lebedev AA Materials Science Forum, 433-4, 293, 2002 |
| 7 |
Investigation of p-3C-SiC/n+-6H-SiC heterojunctions with low doped p-3C-SiC region Lebedev AA, Strel'chuk AM, Savkina NS, Bogdanova EV, Tregubova AS, Kuznetsov AN, Davydov DV Materials Science Forum, 433-4, 427, 2002 |
| 8 |
Radiation hardness of silicon carbide Lebedev AA, Kozlovski VV, Strokan NB, Davydov DV, Ivanov AM, Strel'chuk AM, Yakimova R Materials Science Forum, 433-4, 957, 2002 |
| 9 |
Electrical characteristics of p-3C-SiC/n-6H-SiC heterojunctions grown by sublimation epitaxy on 6H-SiC substrates Lebedev AA, Strel'chuk AM, Davydov DV, Savkina NS, Tregubova AS, Kuznetsov AN, Solov'ev VA, Poletaev NK Applied Surface Science, 184(1-4), 419, 2001 |
| 10 |
Deep centres appearing in 6H and 4H SiC after proton irradiation Lebedev AA, Davydov DV, Strel'chuk AM, Kuznetsov AN, Bogdanova EV, Kozlovski VV, Savkina NS Materials Science Forum, 338-3, 973, 2000 |