화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Gummel Symmetry Test on charge based drain current expression using modified first-order hyperbolic velocity-field expression
Singh K, Bhattacharyya AB
Solid-State Electronics, 129, 188, 2017
2 A generic numerical model for detection of terahertz radiation in MOS field-effect transistors
Wang YL, Yan ZF, Zhu JX, Zhang LN, Lin XN, He J, Cao JC, Chan MS
Solid-State Electronics, 54(8), 791, 2010
3 An accurate, analytical, and technology-mapped definition of the surface potential at threshold and a new postulate for the threshold voltage of MOSFETs
Sarkar V, Dutta AK
Solid-State Electronics, 50(11-12), 1814, 2006