검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Quantum size effect of surface-channeled charge carrier transport in Au nanoparticles-VO2 nanowire assembly Kim GH, Rathi S, Baik JM, Yi KS Current Applied Physics, 15(10), 1107, 2015 |
| 2 |
Subband engineering in n-type silicon nanowires using strain and confinement Stanojevic Z, Sverdlov V, Baumgartner O, Kosina H Solid-State Electronics, 70, 73, 2012 |
| 3 |
Electron subband structure in strained silicon UTB films from the Hensel-Hasegawa-Nakayama model - Part 1 analytical consideration and strain-induced valley splitting Windbacher T, Sverdlov V, Baumgartner O, Selberherr S Solid-State Electronics, 54(2), 137, 2010 |
| 4 |
k center dot p calculations of p-type delta-doped quantum wells in Si Rodriguez-Vargas I, Mora-Ramos ME Solid-State Electronics, 52(6), 849, 2008 |
| 5 |
Effective density-of-states approach to QM correction in MOS structures Ma YT, Li ZJ, Liu LT, Tian LL, Yu ZP Solid-State Electronics, 44(3), 401, 2000 |