화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 The revolution in SiGe: impact on device electronics
Harame DL, Koester SJ, Freeman G, Cottrel P, Rim K, Dehlinger G, Ahlgren D, Dunn JS, Greenberg D, Joseph A, Anderson F, Rieh JS, Onge SAST, Coolbaugh D, Ramachandran V, Cressler JD, Subbanna S
Applied Surface Science, 224(1-4), 9, 2004
2 A doping concentration-dependent upper limit of the breakdown voltage-cutoff frequency product in Si bipolar transistors
Rieh JS, Jagannathan B, Greenberg D, Freeman G, Subbanna S
Solid-State Electronics, 48(2), 339, 2004
3 A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs
Niu GF, Mathew SJ, Cressler JD, Subbanna S
Solid-State Electronics, 44(7), 1187, 2000
4 Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect
Niu GF, Cressler JD, Mathew SJ, Subbanna S
Solid-State Electronics, 44(8), 1507, 2000