화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Fully subthreshold current-based characterization of interface traps and surface potential in III-V-on-insulator MOSFETs
Kim SK, Lee J, Geum DM, Park MS, Choi WJ, Choi SJ, Kim DH, Kim S, Kim DM
Solid-State Electronics, 122, 8, 2016
2 Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: A comparative study
Kumar M, Dubey S, Tiwari PK, Jit S
Current Applied Physics, 13(8), 1778, 2013
3 Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si-SOI-MESFETs
Jit S, Pandey PK, Tiwari PK
Solid-State Electronics, 53(1), 57, 2009
4 Analytic modeling of the subthreshold behavior in MOSFET
Liu CW, Hsieh TX
Solid-State Electronics, 44(9), 1707, 2000