검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse Hemmi F, Thomas C, Lai YC, Higo A, Watamura Y, Samukawa S, Otsuji T, Suemitsu T Solid-State Electronics, 137, 1, 2017 |
| 2 |
Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band Kawasaki T, Sugawara K, Dobroiu A, Eto T, Kurita Y, Kojima K, Yabe Y, Sugiyama H, Watanabe T, Suemitsu T, Ryzhii V, Iwatsuki K, Fukada Y, Kani J, Terada J, Yoshimoto N, Kawahara K, Ago H, Otsuji T Solid-State Electronics, 103, 216, 2015 |
| 3 |
Current collapse suppression in AlGaN/GaN HEMTs by means of slant field plates fabricated by multi-layer SiCN Kobayashi K, Hatakeyama S, Yoshida T, Piedra D, Palacios T, Otsuji T, Suemitsu T Solid-State Electronics, 101, 63, 2014 |
| 4 |
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs Yoshida T, Kobayashi K, Otsuji T, Suemitsu T Solid-State Electronics, 102, 93, 2014 |
| 5 |
Epitaxial graphene field-effect transistors on silicon substrates Kang HC, Karasawa H, Miyamoto Y, Handa H, Suemitsu T, Suemitsu M, Otsuji T Solid-State Electronics, 54(9), 1010, 2010 |
| 6 |
Epitaxial graphene top-gate FETs on silicon substrates Kang HC, Karasawa H, Miyamoto Y, Handa H, Fukidome H, Suemitsu T, Suemitsu M, Otsuji T Solid-State Electronics, 54(10), 1071, 2010 |
| 7 |
Recent achievements in the reliability of InP-based HEMTs Suemitsu T Thin Solid Films, 515(10), 4378, 2007 |
| 8 |
Growth of InP high electron mobility transistor structures with Te doping Bennett BR, Suemitsu T, Waldron N, del Alamo JA Journal of Crystal Growth, 278(1-4), 596, 2005 |
| 9 |
Correlation between current-voltage characteristics and dislocations evaluated with submicrometer Schottky contacts on n-GaN grown by metalorganic chemical vapor deposition Shiojima K, Suemitsu T Journal of Vacuum Science & Technology B, 21(2), 698, 2003 |