검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
A 1.36 mu W 312-315 MHz synchronized-OOK receiver for wireless sensor networks using 65 nm SOTB CMOS technology Hoang MT, Sugii N, Ishibashi K Solid-State Electronics, 117, 161, 2016 |
| 2 |
La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode Zadeh DH, Oomine H, Suzuki Y, Kakushima K, Ahmet P, Nohira H, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H Solid-State Electronics, 82, 29, 2013 |
| 3 |
Comparative study of electrical characteristics in (100) and (110) surface-oriented nMOSFETs with direct contact La-silicate/Si interface structure Kawanago T, Kakushima K, Ahmet P, Kataoka Y, Nishiyama A, Sugii N, Tsutsui K, Natori K, Hattori T, Iwai H Solid-State Electronics, 84, 53, 2013 |
| 4 |
Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process Kawanago T, Suzuki T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H Solid-State Electronics, 68, 68, 2012 |
| 5 |
Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs Kawanago T, Lee Y, Kakushima K, Ahmet P, Tsutsui K, Nishiyama A, Sugii N, Natori K, Hattori T, Iwai H Solid-State Electronics, 74, 2, 2012 |
| 6 |
Interface and electrical properties of La-silicate for direct contact of high-k with silicon Kakushima K, Tachi K, Adachi M, Okamoto K, Sato S, Song J, Kawanago T, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H Solid-State Electronics, 54(7), 715, 2010 |
| 7 |
Characterization of flatband voltage roll-off and roll-up behavior in La2O3/silicate gate dielectric Kakushima K, Koyanagi T, Tachi K, Song J, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H Solid-State Electronics, 54(7), 720, 2010 |
| 8 |
Silicon on thin BOX (SOTB) CMOS for ultralow standby power with forward-biasing performance booster Ishigaki T, Tsuchiya R, Morita Y, Yoshimoto H, Sugii N, Iwamatsu T, Oda H, Inoue Y, Ohtou T, Hiramoto T, Kimura S Solid-State Electronics, 53(7), 717, 2009 |
| 9 |
Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS Kakushima K, Okamoto K, Adachi M, Tachi K, Song J, Sato S, Kawanago T, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H Applied Surface Science, 254(19), 6106, 2008 |
| 10 |
Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion Kakushima K, Okamoto K, Adachi M, Tachi K, Ahmet P, Tsutsui K, Sugii N, Hattori T, Iwai H Solid-State Electronics, 52(9), 1280, 2008 |