검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Analysis of current-voltage-temperature characteristics in SiC Schottky diodes using threshold-accepting simulated-annealing techniques Sarpatwar K, Passmore L, Suliman SA, Awadelkarim OO Solid-State Electronics, 51(5), 644, 2007 |
| 2 |
Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT Thin Solid Films, 504(1-2), 302, 2006 |
| 3 |
Modified three terminal charge pumping technique applied to vertical transistor structures Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT Journal of Vacuum Science & Technology B, 23(5), 2189, 2005 |
| 4 |
Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition Suliman SA, Venkataraman B, Wu CT, Ridley RS, Dolny GM, Awadelkarim OO, Fonash SJ, Ruzyllo J Solid-State Electronics, 47(5), 899, 2003 |
| 5 |
Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench Suliman SA, Awadelkarim OO, Fonash SJ, Ridley RS, Dolny GM, Hao J, Knoedler CM Solid-State Electronics, 46(6), 837, 2002 |
| 6 |
The effects of channel boron-doping on the performance and hot electron reliability of N-channel trend UMOSFETs Suliman SA, Awadelkarim OO, Fonash SJ, Dolny GM, Hao J, Ridley RS, Knoedler CM Solid-State Electronics, 45(5), 655, 2001 |