검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm Bugge F, Bege R, Blume G, Feise D, Sumpf B, Werner N, Zeimer U, Paschke K, Weyers M Journal of Crystal Growth, 491, 31, 2018 |
| 2 |
MOVPE growth optimization for laser diodes with highly strained InGaAs MQWs Bugge F, Zeimer U, Staske R, Sumpf B, Erbert G, Weyers M Journal of Crystal Growth, 298, 652, 2007 |
| 3 |
High-power red laser diodes grown by MOVPE Zorn M, Wenzel H, Zeimer U, Sumpf B, Erbert G, Weyers M Journal of Crystal Growth, 298, 667, 2007 |