검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
An in-depth study of thermal effects in reset transitions in HfO2 based RRAMs Villena MA, Gonzalez MB, Roldan JB, Campabadal F, Jimenez-Molinos F, Gomez-Campos FM, Sune J Solid-State Electronics, 111, 47, 2015 |
| 2 |
Three-state resistive switching in HfO2-based RRAM Lian XJ, Miranda E, Long SB, Perniola L, Liu M, Sune J Solid-State Electronics, 98, 38, 2014 |
| 3 |
Effect of an ultrathin SiO2 interfacial layer on the hysteretic current-voltage characteristics of CeOx-based metal-insulator-metal structures Miranda E, Kano S, Dou C, Sune J, Kakushima K, Iwai H Thin Solid Films, 533, 38, 2013 |
| 4 |
Explicit model for the gate tunneling current in double-gate MOSFETs Chaves F, Jimenez D, Sune J Solid-State Electronics, 68, 93, 2012 |
| 5 |
Modeling the breakdown statistics of Al2O3/HfO2 nanolaminates grown by atomic-layer-deposition Conde A, Martinez C, Jimenez D, Miranda E, Rafi JM, Campabadal F, Sune J Solid-State Electronics, 71, 48, 2012 |
| 6 |
Explicit model for direct tunneling current in double-gate MOSFETs through a dielectric stack Chaves F, Jimenez D, Sune J Solid-State Electronics, 76, 19, 2012 |
| 7 |
Degradation and breakdown characteristics of Al/HfYOx/GaAs capacitors Miranda E, Mahata C, Das T, Sune J, Maiti CK Thin Solid Films, 520(7), 2956, 2012 |
| 8 |
Explicit quantum potential and charge model for double-gate MOSFETs Chaves F, Jimenez D, Sune J Solid-State Electronics, 54(5), 530, 2010 |
| 9 |
Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides Wu E, Sune J, Lai W, Nowak E, McKenna J, Vayshenker A, Harmon D Solid-State Electronics, 46(11), 1787, 2002 |
| 10 |
Quantitative two-step hydrogen model of SiO2 gate oxide breakdown Sune J, Wu E Solid-State Electronics, 46(11), 1825, 2002 |