검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Epitaxial phases of high Bi content GaSbBi alloys Hilska J, Koivusalo E, Puustinen J, Suomalainen S, Guina M Journal of Crystal Growth, 516, 67, 2019 |
| 2 |
Power scalable 2.5 mu m (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxy Paajaste J, Koskinen R, Nikkinen J, Suomalainen S, Okhotnikov OG Journal of Crystal Growth, 323(1), 454, 2011 |
| 3 |
High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2 mu m Paajaste J, Suomalainen S, Koskinen R, Harkonen A, Guina M, Pessa M Journal of Crystal Growth, 311(7), 1917, 2009 |
| 4 |
Long-wavelength semiconductor saturable absorber mirrors using metamorphic InP grown on GaAs by molecular beam epitaxy Suomalainen S, Vainionpaa A, Tengvall O, Hakulinen T, Herda R, Karirinne S, Guina M, Okhotnikov OG Journal of Vacuum Science & Technology B, 24(3), 1496, 2006 |
| 5 |
Semiconductor saturable absorber mirror with wavelength tailored distributed Bragg reflector Vainionpaa A, Suomalainen S, Isomaki A, Tengvall O, Pessa M, Okhotnikov OG Journal of Crystal Growth, 278(1-4), 751, 2005 |