| 1 |
Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells
Khan MA, Hara KO, Nakamura K, Du WJ, Baba M, Toh K, Suzuno M, Toko K, Usami N, Suemasu T
Journal of Crystal Growth, 378, 201, 2013 |
| 2 |
Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in beta-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy
Funase Y, Suzuno M, Toko K, Suemasu T
Journal of Crystal Growth, 378, 365, 2013 |
| 3 |
Formation of polycrystalline BaSi2 films by radio-frequency magnetron sputtering for thin-film solar cell applications
Yoneyama T, Okada A, Suzuno M, Shibutami T, Matsumaru K, Saito N, Yoshizawa N, Toko K, Suemasu T
Thin Solid Films, 534, 116, 2013 |
| 4 |
Metalorganic chemical vapor deposition of beta-FeSi2 on beta-FeSi2 seed crystals formed on Si substrates
Suzuno M, Akutsu K, Kawakami H, Akiyama K, Suemasu T
Thin Solid Films, 519(24), 8473, 2011 |
| 5 |
Fabrication of Fe3Si/CaF2 heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy
Sadakuni-Makabe K, Suzuno M, Harada K, Suemasu T, Akinaga H
Thin Solid Films, 519(24), 8509, 2011 |
