| 1 |
Two-pulse sub-ns switching scheme for advanced spin-orbit torque MRAM
Sverdlov V, Makarov A, Selberherr S
Solid-State Electronics, 155, 49, 2019 |
| 2 |
Current and shot noise at spin-dependent hopping through junctions with ferromagnetic contacts
Sverdlov V, Selberherr S
Solid-State Electronics, 159, 43, 2019 |
| 3 |
Special Issue of Solid-State Electronics, dedicated to EUROSOI-ULIS 2016
Sverdlov V, Selberherr S
Solid-State Electronics, 128, 1, 2017 |
| 4 |
Influence of magnetization variations in the free layer on a non-volatile magnetic flip flop
Windbacher T, Makarov A, Sverdlov V, Selberherr S
Solid-State Electronics, 108, 2, 2015 |
| 5 |
Electron mobility and spin lifetime enhancement in strained ultra-thin silicon films
Osintsev D, Sverdlov V, Selberherr S
Solid-State Electronics, 112, 46, 2015 |
| 6 |
Spin injection in a semiconductor through a space-charge layer
Ghosh J, Windbacher T, Sverdlov V, Selberherr S
Solid-State Electronics, 101, 116, 2014 |
| 7 |
Implication logic gates using spin-transfer-torque-operated magnetic tunnel junctions for intrinsic logic-in-memory
Mahmoudi H, Windbacher T, Sverdlov V, Selberherr S
Solid-State Electronics, 84, 191, 2013 |
| 8 |
Subband splitting and surface roughness induced spin relaxation in (001) silicon SOI MOSFETs
Osintsev D, Baumgartner O, Stanojevic Z, Sverdlov V, Selberherr S
Solid-State Electronics, 90, 34, 2013 |
| 9 |
Subband engineering in n-type silicon nanowires using strain and confinement
Stanojevic Z, Sverdlov V, Baumgartner O, Kosina H
Solid-State Electronics, 70, 73, 2012 |
| 10 |
Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels
Osintsev D, Sverdlov V, Stanojevic Z, Makarov A, Selberherr S
Solid-State Electronics, 71, 25, 2012 |
