화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Surface preparation of 6H-SiC substrates by electron beam annealing
Agueev OA, Avdeev SP, Svetlichnyi AM, Konakova RV, Milenin VV, Lytvyn PM, Lytvyn OS, Okhrimenko OB, Soloviev SI, Sudarshan TS
Materials Science Forum, 483, 725, 2005
2 Influence of rapid thermal annealing on Ni/6H-SiC contact formation
Agueev OA, Svetlichnyi AM, Razgonov RN
Materials Science Forum, 389-3, 901, 2002
3 Effect of rapid thermal annealing conditions on parameters of Ni/21R-SiC contacts
Litvinov VL, Demakov KD, Agueev OA, Svetlichnyi AM, Konakova RV, Lytvyn PM, Milenin VV
Materials Science Forum, 389-3, 905, 2002
4 Optimization of chamber design and rapid thermal processing regimes for SiC substrates by temperature and thermal stress distribution
Agueev OA, Svetlichnyi AM, Klovo AG, Kocherov AN, Izotovs DA
Materials Science Forum, 433-4, 107, 2002