화학공학소재연구정보센터
검색결과 : 19건
No. Article
1 PINK1 Loss-of-Function Mutations Affect Mitochondrial Complex I Activity via NdufA10 Ubiquinone Uncoupling
Morais VA, Haddad D, Craessaerts K, De Bock PJ, Swerts J, Vilain S, Aerts L, Overbergh L, Grunewald A, Seibler P, Klein C, Gevaert K, Verstreken P, De Strooper B
Science, 344(6180), 203, 2014
2 Direct Copper Electrochemical Deposition on Ru-Based Substrates for Advanced Interconnects Target 30 nm and 1/2 Pitch Lines: From Coupon to Full-Wafer Experiments
Armini S, El-Mekki Z, Swerts J, Nagar M, Demuynck S
Journal of the Electrochemical Society, 160(3), D89, 2013
3 Ozone Based Atomic Layer Deposition of Hafnium Oxide and Impact of Nitrogen Oxide Species
Delabie A, Swerts J, Van Elshocht S, Jung SH, Raisanen PI, Givens ME, Shero EJ, Peeters J, Machkaoutsan V, Maes JW
Journal of the Electrochemical Society, 158(5), D259, 2011
4 Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects
Adelmann C, Swerts J, Richard O, Conard T, Popovici M, Meersschaut J, Afanas'ev VV, Breuil L, Cacciato A, Opsomer K, Brijs B, Tielens H, Pourtois G, Bender H, Jurczak M, Van Houdt J, Van Elshocht S, Kittl JA
Journal of the Electrochemical Society, 158(8), H778, 2011
5 Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation
Suhane A, Cacciato A, Richard O, Arreghini A, Adelmann C, Swerts J, Rothschild O, Van den Bosch G, Breuil L, Bender H, Jurczak M, Debusschere I, Kittl JA, De Meyer K, Van Houdt J
Solid-State Electronics, 65-66, 177, 2011
6 Ozone-Based Metal Oxide Atomic Layer Deposition: Impact of N-2/O-2 Supply Ratio in Ozone Generation
Delabie A, Caymax M, Gielis S, Maes JW, Nyns L, Popovici M, Swerts J, Tielens H, Peeters J, Van Elshocht S
Electrochemical and Solid State Letters, 13(6), II176, 2010
7 Atomic Layer Deposition of Strontium Titanate Films Using Sr((Bu3Cp)-Bu-t)(2) and Ti(OMe)(4)
Popovici M, Van Elshocht S, Menou N, Swerts J, Pierreux D, Delabie A, Brijs B, Conard T, Opsomer K, Maes JW, Wouters DJ, Kittl JA
Journal of the Electrochemical Society, 157(1), G1, 2010
8 Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO2 Gate Dielectrics
Swerts J, Peys N, Nyns L, Delabie A, Franquet A, Maes JW, Van Elshocht S, De Gendt S
Journal of the Electrochemical Society, 157(1), G26, 2010
9 Atomic Layer Deposition of Gd-Doped HfO2 Thin Films
Adelmann C, Tielens H, Dewulf D, Hardy A, Pierreux D, Swerts J, Rosseel E, Shi X, Van Bael MK, Kittl JA, Van Elshocht S
Journal of the Electrochemical Society, 157(4), G105, 2010
10 ALD and Parasitic Growth Characteristics of the Tetrakisethylmethylamino Hafnium (TEMAH)/H2O Process
Nyns L, Delabie A, Swerts J, Van Elshocht S, De Gendt S
Journal of the Electrochemical Society, 157(11), G225, 2010