화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Gradual switching and self-rectifying characteristics of Cu/alpha-IGZO/p(+)-Si RRAM for synaptic device application
Bang S, Kim MH, Kim TH, Lee DK, Kim S, Cho S, Park BG
Solid-State Electronics, 150, 60, 2018
2 Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory
Kim MH, Kim S, Bang S, Kim TH, Lee DK, Cho S, Lee JH, Park BG
Solid-State Electronics, 132, 109, 2017