검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Enhanced electronic injection in organic light-emitting diodes by incorporating silver nanoclusters and cesium carbonate Chen YC, Gao CY, Chen KL, Sze PW, Huang CJ Applied Surface Science, 351, 232, 2015 |
| 2 |
AlGaN/GaN metal oxide semiconductor high electron mobility transistor using liquid-phase deposited strontium titanate Wu TY, Hu CC, Sze PW, Huang TJ, Adriyanto F, Wu CL, Wang YH Solid-State Electronics, 82, 1, 2013 |
| 3 |
AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al2O3 as Gate Dielectric Basu S, Singh PK, Sze PW, Wang YH Journal of the Electrochemical Society, 157(10), H947, 2010 |
| 4 |
Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric Basu S, Singh PK, Sze PW, Wang YH Solid-State Electronics, 54(8), 763, 2010 |
| 5 |
Diffusion barrier layers for Al on GaAs native oxide grown by liquid phase chemical-enhanced oxidation Huang JJ, Chou DW, Sze PW, Wang YH Solid-State Electronics, 52(2), 289, 2008 |
| 6 |
Study of diffusion barriers for Au metal on liquid phase oxidized GaAs Sze PW, Huang JJ, Chou DW, Wang YH Journal of Vacuum Science & Technology B, 24(6), 2640, 2006 |
| 7 |
AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric Lee KW, Sze PW, Wang YH, Houng MP Solid-State Electronics, 49(2), 213, 2005 |
| 8 |
Influence of annealing ambient on GaAs oxide prepared by the liquid phase method Chou DW, Wang LT, Wang HH, Sze PW, Wang YH, Houng MP Solid-State Electronics, 48(12), 2175, 2004 |
| 9 |
Liquid phase deposited SiO2 on GaN Wu HR, Lee KW, Nian TB, Chou DW, Wu JJH, Wang YH, Houng MP, Sze PW, Su YK, Chang SJ, Ho CH, Chiang CI, Chern YT, Juang FS, Wen TC, Lee WI, Chyi JI Materials Chemistry and Physics, 80(1), 329, 2003 |
| 10 |
Properties of GaAs MOSFET with gate dielectric grown by liquid-phase selective oxidation method Wu JY, Sze PW, Deng YM, Huang GW, Wang YH, Houng MP Solid-State Electronics, 45(5), 635, 2001 |