검색결과 : 68건
No. | Article |
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1 |
Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications Yao JN, Lin YC, Lin MS, Huang TJ, Hsu HT, Sze SM, Chang EY Solid-State Electronics, 157, 55, 2019 |
2 |
The influence on electrical characteristics of amorphous indium tungsten oxide thin film transistors with multi-stacked active layer structure Ruan DB, Liu PT, Gan KJ, Chiu YC, Yu MC, Chien TC, Chen YH, Kuo PY, Sze SM Thin Solid Films, 666, 94, 2018 |
3 |
Performance improvements of tungsten and zinc doped indium oxide thin film transistor by fluorine based double plasma treatment with a high-K gate dielectric Ruan DB, Liu PT, Chiu YC, Yu MC, Gan KJ, Chien TC, Chen YH, Kuo PY, Sze SM Thin Solid Films, 665, 117, 2018 |
4 |
Effect of interfacial layer on device performance of metal oxide thin-film transistor with a multilayer high-k gate stack Ruan DB, Liu PT, Chiu YC, Kuo PY, Yu MC, Kan KZ, Chien TC, Chen YH, Sze SM Thin Solid Films, 660, 578, 2018 |
5 |
Investigation of low operation voltage InZnSnO thin-film transistors with different high-k gate dielectric by physical vapor deposition Ruan DB, Liu PT, Chiu YC, Kan KZ, Yu MC, Chien TC, Chen YH, Kuo PY, Sze SM Thin Solid Films, 660, 885, 2018 |
6 |
Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Shih CC, Wu CH, Yang CC, Chen WC, Lin JC, Wang MH, Zheng HX, Chen MC, Sze SM Applied Surface Science, 414, 224, 2017 |
7 |
Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment Chang KC, Chen JH, Tsai TM, Chang TC, Huang SY, Zhang R, Chen KH, Syu YE, Chang GW, Chu TJ, Liu GR, Su YT, Chen MC, Pan JH, Liao KH, Tai YH, Young TF, Sze SM, Ai CF, Wang MC, Huang JW Journal of Supercritical Fluids, 85, 183, 2014 |
8 |
Role of InGaOx resistive switching characteristics on the performances of resistance random access memory of Pt/IGO/TiN device Yang JB, Chang TC, Huang JJ, Chen YT, Yang PC, Tseng HC, Chu AK, Sze SM, Tsai MJ Thin Solid Films, 528, 26, 2013 |
9 |
Influence of forming process on resistance switching characteristics of In2O3/SiO2 bi-layer Huang JJ, Chang TC, Yang PC, Chen YT, Tseng HC, Yang JB, Sze SM, Chu AK, Tsai MJ Thin Solid Films, 528, 31, 2013 |
10 |
The resistive switching characteristics in TaON films for nonvolatile memory applications Chen MC, Chang TC, Chiu YC, Chen SC, Huang SY, Chang KC, Tsai TM, Yang KH, Sze SM, Tsai MJ Thin Solid Films, 528, 224, 2013 |