| 1 |
Experimental extraction of stern -layer capacitance in biosensor detection using silicon nanowire field-effect transistors
Choi S, Mo HS, Kim J, Kim S, Lee SM, Choi SJ, Kim DM, Park DW, Kim DH
Current Applied Physics, 20(6), 828, 2020 |
| 2 |
Device design of single-gated feedback field-effect transistors to achieve latch-up behaviors with high current gains
Woo S, Kim S
Current Applied Physics, 20(10), 1156, 2020 |
| 3 |
Effects of tunneling oxide defect density and inter-diffused carrier concentration on carrier selective contact solar cell performance: Illumination and temperature effects
Park C, Balaji N, Ahn S, Park J, Cho EC, Yi J
Solar Energy, 211, 62, 2020 |
| 4 |
A compact model and TCAD simulation for GaN-gate injection transistor (GIT)
Garcia F, Shamsir S, Islam SK
Solid-State Electronics, 151, 52, 2019 |
| 5 |
Analytical modeling of capacitances in tunnel-FETs including the effect of Schottky barrier contacts
Farokhnejad A, Schwarz M, Horst F, Iniguez B, Lime F, Kloes A
Solid-State Electronics, 159, 191, 2019 |
| 6 |
3D simulations of interdigitated back-contacted crystalline silicon solar cells on thin substrates
Jin C, Martin I, Ortega PR, Calle E, Alcubilla R
Solar Energy, 167, 242, 2018 |
| 7 |
Role of AlGaN/GaN interface traps on negative threshold voltage shift in AlGaN/GaN HEMT
Malik A, Sharma C, Laishram R, Bag RK, Rawal DS, Vinayak S, Sharma RK
Solid-State Electronics, 142, 8, 2018 |
| 8 |
Universal model of bias-stress-induced instability in inkjet-printed carbon nanotube networks field-effect transistors
Jung H, Choi S, Jang JT, Yoon J, Lee J, Lee Y, Rhee J, Ahn G, Yu HR, Kim DM, Choi SJ, Kim DH
Solid-State Electronics, 140, 80, 2018 |
| 9 |
Digital and analog TFET circuits: Design and benchmark
Strangio S, Settino F, Palestri P, Lanuzza M, Crupi F, Esseni D, Selmi L
Solid-State Electronics, 146, 50, 2018 |
| 10 |
Optimal parameters for performant heterojunction InGaP/GaAs solar cell
Djaafar F, Hadri B, Bachir G
International Journal of Hydrogen Energy, 42(13), 8644, 2017 |
