화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications
Keiper D, Velling P, Brennemann A, Agethen M, van den Berg C, Bertenburg RM, Schineller B, Heuken M
Journal of Crystal Growth, 248, 153, 2003
2 High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios
Agert C, Dimroth F, Schubert U, Bett AW, Leu S, Stolz W
Solar Energy Materials and Solar Cells, 66(1-4), 637, 2001
3 Growth of highly strained GaInAs/GaAs quantum wells for 1.2 mu m wavelength lasers
Schlenker D, Miyamoto T, Chen Z, Koyama F, Iga K
Journal of Crystal Growth, 209(1), 27, 2000
4 Alternative N-, P- and As-precursors for III/V-epitaxy
Stolz W
Journal of Crystal Growth, 209(2-3), 272, 2000
5 Flow rate modulation epitaxy of high-quality V-shaped AlGaAs/GaAs quantum wires using tertiarybutylarsine as the arsenic source
Wang XL, Ogura M
Journal of Crystal Growth, 221, 556, 2000
6 Excitons in ultrathin InAs/InP quantum wells: Interplay between extended and localized states
Paki P, Leonelli R, Isnard L, Masut RA
Journal of Vacuum Science & Technology A, 18(3), 956, 2000
7 Effects of organic As-precursors on the incorporation of In and Ga into (GaIn)As films grown by metal-organic vapor-phase epitaxy
Kirpal G, Gerhardt M, Gottschalch V, Franzheld R, Semmelhack HC
Thin Solid Films, 342(1-2), 113, 1999
8 Chemical beam epitaxial growth of GaAs1-xPx on GaAs (100) substrates
Wildt D, Garcia BJ, Castano JL, Piqueras J, Pastor CJ
Journal of Vacuum Science & Technology B, 16(4), 1804, 1998
9 Over 27% efficiency GaAs/InGaAs mechanically stacked solar cell
Matsubara H, Tanabe T, Moto A, Mine Y, Takagishi S
Solar Energy Materials and Solar Cells, 50(1), 177, 1998
10 A New Reactor for Purely Homogeneous Kinetic-Studies of Endothermic Reactions
Safvi SA, Mountziaris TJ
AIChE Journal, 40(9), 1535, 1994