검색결과 : 10건
No. | Article |
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1 |
MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications Keiper D, Velling P, Brennemann A, Agethen M, van den Berg C, Bertenburg RM, Schineller B, Heuken M Journal of Crystal Growth, 248, 153, 2003 |
2 |
High-efficiency (AlGa)As/GaAs solar cells grown by MOVPE using TBAs at low-temperatures and low V/III-ratios Agert C, Dimroth F, Schubert U, Bett AW, Leu S, Stolz W Solar Energy Materials and Solar Cells, 66(1-4), 637, 2001 |
3 |
Growth of highly strained GaInAs/GaAs quantum wells for 1.2 mu m wavelength lasers Schlenker D, Miyamoto T, Chen Z, Koyama F, Iga K Journal of Crystal Growth, 209(1), 27, 2000 |
4 |
Alternative N-, P- and As-precursors for III/V-epitaxy Stolz W Journal of Crystal Growth, 209(2-3), 272, 2000 |
5 |
Flow rate modulation epitaxy of high-quality V-shaped AlGaAs/GaAs quantum wires using tertiarybutylarsine as the arsenic source Wang XL, Ogura M Journal of Crystal Growth, 221, 556, 2000 |
6 |
Excitons in ultrathin InAs/InP quantum wells: Interplay between extended and localized states Paki P, Leonelli R, Isnard L, Masut RA Journal of Vacuum Science & Technology A, 18(3), 956, 2000 |
7 |
Effects of organic As-precursors on the incorporation of In and Ga into (GaIn)As films grown by metal-organic vapor-phase epitaxy Kirpal G, Gerhardt M, Gottschalch V, Franzheld R, Semmelhack HC Thin Solid Films, 342(1-2), 113, 1999 |
8 |
Chemical beam epitaxial growth of GaAs1-xPx on GaAs (100) substrates Wildt D, Garcia BJ, Castano JL, Piqueras J, Pastor CJ Journal of Vacuum Science & Technology B, 16(4), 1804, 1998 |
9 |
Over 27% efficiency GaAs/InGaAs mechanically stacked solar cell Matsubara H, Tanabe T, Moto A, Mine Y, Takagishi S Solar Energy Materials and Solar Cells, 50(1), 177, 1998 |
10 |
A New Reactor for Purely Homogeneous Kinetic-Studies of Endothermic Reactions Safvi SA, Mountziaris TJ AIChE Journal, 40(9), 1535, 1994 |