화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Spin injection in a semiconductor through a space-charge layer
Ghosh J, Windbacher T, Sverdlov V, Selberherr S
Solid-State Electronics, 101, 116, 2014
2 Study of leakage-induced photon emission processes in sub-90 nm CMOS devices
Weizman Y, Gurfinkel M, Margulis A, Fefer Y, Shapira Y, Baruch E
Solid-State Electronics, 50(6), 920, 2006
3 Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping
Zhang RY, Wang W, Zhou F, Bian J, Zhao LJ, Zhu HL, Jian SS
Materials Science Forum, 475-479, 1663, 2005
4 Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy
Yoshikane T, Urakami A, Koizumi A, Hisadome S, Tabuchi M, Inoue K, Fujiwara Y, Takeda Y
Applied Surface Science, 237(1-4), 246, 2004
5 Low threshold current densities in red VCSELs
Butendeich R, Graef D, Schwarz J, Ballmann T, Schweizer H, Scholz F
Journal of Crystal Growth, 221, 657, 2000
6 Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells
Stintz A, Liu GT, Gray AL, Spillers R, Delgado SM, Malloy KJ
Journal of Vacuum Science & Technology B, 18(3), 1496, 2000
7 Fabrication and Investigation of Nanostructures and Their Application in New Laser Devices
Griesinger UA, Kronmuller S, Geiger M, Ottenwalder D, Scholz F, Schweizer H
Journal of Vacuum Science & Technology B, 14(6), 4058, 1996
8 Nanoscale Structures in III-V Semiconductors Using Sidewall Masking and High Ion Density Dry-Etching
Ren F, Pearton SJ, Abernathy CR, Lothian JR
Journal of Vacuum Science & Technology A, 13(3), 753, 1995
9 Luminescence Characterization of In0.12Ga0.88As0.34P0.66 Grown on Gaas0.61P0.39 Substrates by Liquid-Phase Epitaxy
Chen CW, Wu MC, Yeh YH
Journal of the Electrochemical Society, 141(8), 2211, 1994
10 Microstructured Semiconductor Lasers for High-Speed Information-Processing
Gourley PL
Nature, 371(6498), 571, 1994