검색결과 : 10건
No. | Article |
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1 |
Spin injection in a semiconductor through a space-charge layer Ghosh J, Windbacher T, Sverdlov V, Selberherr S Solid-State Electronics, 101, 116, 2014 |
2 |
Study of leakage-induced photon emission processes in sub-90 nm CMOS devices Weizman Y, Gurfinkel M, Margulis A, Fefer Y, Shapira Y, Baruch E Solid-State Electronics, 50(6), 920, 2006 |
3 |
Low threshold current density 1.5 mu m strained-MQW laser by n-type modulation-doping Zhang RY, Wang W, Zhou F, Bian J, Zhao LJ, Zhu HL, Jian SS Materials Science Forum, 475-479, 1663, 2005 |
4 |
Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy Yoshikane T, Urakami A, Koizumi A, Hisadome S, Tabuchi M, Inoue K, Fujiwara Y, Takeda Y Applied Surface Science, 237(1-4), 246, 2004 |
5 |
Low threshold current densities in red VCSELs Butendeich R, Graef D, Schwarz J, Ballmann T, Schweizer H, Scholz F Journal of Crystal Growth, 221, 657, 2000 |
6 |
Characterization of InAs quantum dots in strained InxGa1-xAs quantum wells Stintz A, Liu GT, Gray AL, Spillers R, Delgado SM, Malloy KJ Journal of Vacuum Science & Technology B, 18(3), 1496, 2000 |
7 |
Fabrication and Investigation of Nanostructures and Their Application in New Laser Devices Griesinger UA, Kronmuller S, Geiger M, Ottenwalder D, Scholz F, Schweizer H Journal of Vacuum Science & Technology B, 14(6), 4058, 1996 |
8 |
Nanoscale Structures in III-V Semiconductors Using Sidewall Masking and High Ion Density Dry-Etching Ren F, Pearton SJ, Abernathy CR, Lothian JR Journal of Vacuum Science & Technology A, 13(3), 753, 1995 |
9 |
Luminescence Characterization of In0.12Ga0.88As0.34P0.66 Grown on Gaas0.61P0.39 Substrates by Liquid-Phase Epitaxy Chen CW, Wu MC, Yeh YH Journal of the Electrochemical Society, 141(8), 2211, 1994 |
10 |
Microstructured Semiconductor Lasers for High-Speed Information-Processing Gourley PL Nature, 371(6498), 571, 1994 |