화학공학소재연구정보센터
검색결과 : 53건
No. Article
1 Optimization of a TiSi2 formation based on PECVD Ti using DoE methodology
Hossler D, Ernst M
Solid-State Electronics, 158, 51, 2019
2 Enhanced growth of low-resistivity titanium silicides on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer
Wu WW, Wang CW, Chen KN, Cheng SL, Lee SW
Thin Solid Films, 518(24), 7279, 2010
3 Crystallography of TiSi2 (C54) epitaxy on (111)(Si) and (001)(Si) surfaces
Zhang MX, Qiu D, Kelly PM
Thin Solid Films, 516(16), 5498, 2008
4 Ab initio comparative study of C54 and C49TiSi(2) surfaces
Wang T, Oh SY, Lee WJ, Kim YJ, Lee HD
Applied Surface Science, 252(14), 4943, 2006
5 Solid phase reaction in Ti(thin film)/Si(substrate) with Mo interlayer: SXES and PEEM study
Labis J, Namatame H, Taniguchi A, Kamezawa C, Hirai A, Kusaka A, Iwami M
Thin Solid Films, 464-65, 107, 2004
6 Effects of intermediate phase C40TiSi(2) on the formation temperature of C54TiSi(2) with a Ta interlayer
Wang RN, Feng JY, Huang Y
Journal of Crystal Growth, 253(1-4), 280, 2003
7 Ti/TiN coatings for microfabricated cantilevers used in atomic force microscopy
Wiederhold KP, Yamaguchi Y, Ayala A, Matheaus M, Gutierrez CJ, Galloway HC
Journal of Vacuum Science & Technology B, 18(3), 1182, 2000
8 Schottky barrier formation at Cu/TiB2/TiSi2/Si interface
Pelleg J
Journal of Vacuum Science & Technology B, 18(3), 1338, 2000
9 Effects of high current conduction in sub-micron Ti-silicided films
Gan CL, Pey KL, Chim WK, Siah SY
Solid-State Electronics, 44(10), 1837, 2000
10 The effect of elevated silicon substrate temperature on TiSi2 formatio from a Ti film
Ezoe K, Yamamoto T, Ishii K, Matsumoto S
Thin Solid Films, 369(1-2), 244, 2000