검색결과 : 53건
No. | Article |
---|---|
1 |
Optimization of a TiSi2 formation based on PECVD Ti using DoE methodology Hossler D, Ernst M Solid-State Electronics, 158, 51, 2019 |
2 |
Enhanced growth of low-resistivity titanium silicides on epitaxial Si0.7Ge0.3 on (001)Si with a sacrificial amorphous Si interlayer Wu WW, Wang CW, Chen KN, Cheng SL, Lee SW Thin Solid Films, 518(24), 7279, 2010 |
3 |
Crystallography of TiSi2 (C54) epitaxy on (111)(Si) and (001)(Si) surfaces Zhang MX, Qiu D, Kelly PM Thin Solid Films, 516(16), 5498, 2008 |
4 |
Ab initio comparative study of C54 and C49TiSi(2) surfaces Wang T, Oh SY, Lee WJ, Kim YJ, Lee HD Applied Surface Science, 252(14), 4943, 2006 |
5 |
Solid phase reaction in Ti(thin film)/Si(substrate) with Mo interlayer: SXES and PEEM study Labis J, Namatame H, Taniguchi A, Kamezawa C, Hirai A, Kusaka A, Iwami M Thin Solid Films, 464-65, 107, 2004 |
6 |
Effects of intermediate phase C40TiSi(2) on the formation temperature of C54TiSi(2) with a Ta interlayer Wang RN, Feng JY, Huang Y Journal of Crystal Growth, 253(1-4), 280, 2003 |
7 |
Ti/TiN coatings for microfabricated cantilevers used in atomic force microscopy Wiederhold KP, Yamaguchi Y, Ayala A, Matheaus M, Gutierrez CJ, Galloway HC Journal of Vacuum Science & Technology B, 18(3), 1182, 2000 |
8 |
Schottky barrier formation at Cu/TiB2/TiSi2/Si interface Pelleg J Journal of Vacuum Science & Technology B, 18(3), 1338, 2000 |
9 |
Effects of high current conduction in sub-micron Ti-silicided films Gan CL, Pey KL, Chim WK, Siah SY Solid-State Electronics, 44(10), 1837, 2000 |
10 |
The effect of elevated silicon substrate temperature on TiSi2 formatio from a Ti film Ezoe K, Yamamoto T, Ishii K, Matsumoto S Thin Solid Films, 369(1-2), 244, 2000 |