| 1 |
Trap creation in ultrathin SiO2 films due to electron injection studied by scanning tunneling microscopy/scanning tunneling spectroscopy
Ohmori K, Zaima S, Yasuda Y
Applied Surface Science, 162, 395, 2000 |
| 2 |
Localized degradation studies of ultrathin gate oxides
Wen HJ, Ludeke R
Journal of Vacuum Science & Technology A, 16(3), 1735, 1998 |
| 3 |
Electrical Characterization of Oxynitrided Gate Dielectrics Under Constant-Current Fowler-Nordheim Stress
Nguyen TK, Landsberger LM, Belkouch S, Jean C
Journal of the Electrochemical Society, 144(9), 3299, 1997 |
| 4 |
Investigation of Existing Defects and Defect Generation in Device-Grade SiO2 by Ballistic-Electron-Emission Spectroscopy
Wen HJ, Ludeke R
Journal of Vacuum Science & Technology B, 15(4), 1080, 1997 |
| 5 |
Reliability of Ultimate Ultrathin Silicon-Oxide Films Produced by the Continuous Ultradry Process
Yamada H
Journal of Vacuum Science & Technology B, 14(2), 757, 1996 |
| 6 |
Stressing and High-Field Transport Studies on Device-Grade SiO2 by Ballistic-Electron-Emission Spectroscopy
Ludeke R, Wen HJ, Cartier E
Journal of Vacuum Science & Technology B, 14(4), 2855, 1996 |
| 7 |
Intrinsic and Extrinsic Threshold Voltage Shift Dependence on the Oxide Field-Induced During Optically Assisted Electron Injection
Kim HS, Williams CK, Reisman A
Journal of the Electrochemical Society, 142(3), 979, 1995 |
