| 1 |
Comparison of positive and negative bias-temperature instability on MOSFETs with HfO2/LaOx and HfO2/AlOx dielectric stacks
Lu CC, Chang-Liao KS, Tsao CH, Wang TK
Solid-State Electronics, 54(11), 1474, 2010 |
| 2 |
High-quality NH3-annealed atomic layer deposited Si-nitride/SiO2 stack gate dielectrics for sub-100 nm technology generations
Khosru QDM, Nakajima A, Yoshimoto T, Yokoyama S
Solid-State Electronics, 46(10), 1659, 2002 |
| 3 |
An improved method for determining the critical energy for interface trap generation of n-MOSFETs under V-g = V-d/2 stress mode
Mu FC, Mao LF, Wei JL, Tan CH, Xu MZ
Solid-State Electronics, 45(3), 385, 2001 |
| 4 |
A novel method for determining the effect of interface trap generation on the degradation of n-MOSFETs under different hot-carrier stress modes
Mu FC, Xu MZ, Tan CH
Solid-State Electronics, 45(3), 435, 2001 |
| 5 |
Interface states distribution in electrical stressed oxynitrided gate-oxide
Belkouch S, Nguyen TK, Landsberger LM, Aktik C, Jean C, Kahrizi M
Journal of the Electrochemical Society, 145(7), 2489, 1998 |
| 6 |
Physical and Electrical-Properties in Metal-Oxide-Si Capacitors with Various Gate Electrodes and Gate Oxides
Changliao KS, Chen LC
Journal of Vacuum Science & Technology B, 15(4), 942, 1997 |
| 7 |
Stress-Field Polarity Effect on Defects Generation in Thin Silicon Dioxide Films
Elhdiy A, Salace G, Jourdain M, Meinertzhagen A, Vuillaume D
Thin Solid Films, 296(1-2), 106, 1997 |
| 8 |
Electrical-Properties of Thermally Oxidized Porous Silicon
Wu ZY, Hall S, Keen JM
Journal of the Electrochemical Society, 143(9), 2972, 1996 |
| 9 |
Thickness Dependence of Oxide Wearout
Dumin DJ
Journal of the Electrochemical Society, 143(11), 3736, 1996 |
| 10 |
Wearout and Breakdown in Thin Silicon-Oxide
Dumin DJ
Journal of the Electrochemical Society, 142(4), 1272, 1995 |
