검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
The interface formation of PTCDA on Se-modified GaAs(100) surfaces Park S, Querner T, Kampen TU, Braun W, Zahn DRT Applied Surface Science, 166(1-4), 376, 2000 |
| 2 |
Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density Remashan K, Bhat KN Thin Solid Films, 342(1-2), 20, 1999 |
| 3 |
Reduction of Recombination Velocity on GaAs Surface by Ga-S and as-S Bond-Related Surface-States from (NH4)(2)S-X Treatment Sik H, Feurprier Y, Cardinaud C, Turban G, Scavennec A Journal of the Electrochemical Society, 144(6), 2106, 1997 |
| 4 |
Sulfur Contamination of (100)GaAs Resulting from Sample Preparation Procedures and Atmospheric Exposure Butcher KS, Egan RJ, Tansley TL, Alexiev D Journal of Vacuum Science & Technology B, 14(1), 152, 1996 |
| 5 |
Reflectance Anisotropy Spectroscopy - A Probe for Surface-Chemistry on Na2S-Passivated and (NH4)(2)S-Passivated (001) GaAs Paget D, Berkovits VL, Gusev AO Journal of Vacuum Science & Technology A, 13(5), 2368, 1995 |