| 1 |
Investigation on scalability of dual trench epitaxial diode for phase change memory
Wang H, Liu B, Liu Y, Zhang C, Zhan YP, Xu Z, Gao D, Song ZT, Feng SL
Solid-State Electronics, 132, 99, 2017 |
| 2 |
Effect of a Multi-Step Gap-Filling Process to Improve Adhesion between Low-K Films and Metal Patterns
Lee W, Kim TH, Choa YH
Korean Journal of Materials Research, 26(8), 427, 2016 |
| 3 |
Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors
Kwon SK, Kwon HM, Choi WI, Song HS, Lee HD
Solid-State Electronics, 119, 29, 2016 |
| 4 |
Shallow trench isolation geometric influence of a recessed surface on array-type arrangements of nano-scaled devices strained by contact etch stop liner and Ge-based stressors
Hsieh CP, Liao MH, Lee CC, Cheng TC, Wang CP, Huang PC, Cheng SW
Thin Solid Films, 618, 172, 2016 |
| 5 |
Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern
Lee CC, Liu CH, Deng RH, Hsu HW, Chiang KN
Thin Solid Films, 557, 323, 2014 |
| 6 |
Narrow gap filling in 25 nm shallow trench isolation using highly porous organosilica
Oh H, Kim JH, Jang J
Thin Solid Films, 562, 166, 2014 |
| 7 |
Design and optimization of high voltage LDMOS transistors on 0.18 mu m SOI CMOS technology
Toulon G, Cortes I, Morancho F, Hugonnard-Bruyere E, Villard B, Toren WJ
Solid-State Electronics, 61(1), 111, 2011 |
| 8 |
The optimization of deep trench isolation structure for high voltage devices on SOI substrate
Qian QS, Sun WF, Han DX, Liu SY, Su Z, Shi LX
Solid-State Electronics, 63(1), 154, 2011 |
| 9 |
Shallow trench isolation-related narrow channel effect on the kink behaviour of 40 nm PD SOI NMOS device
Hung HJ, Kuo JB, Chen D, Tsai CT, Yeh C
Solid-State Electronics, 54(5), 609, 2010 |
| 10 |
Influence of layout design and on-wafer heatspreaders on the thermal behavior of fully-isolated bipolar transistors: Part I - Static analysis
Russo S, La Spina L, d'Alessandro V, Rinaldi N, Nanver LK
Solid-State Electronics, 54(8), 745, 2010 |
