화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Effect of Gallium Source Material on the Transparent Conducting Properties of Ga:ZnO Thin Films Through Metalorganic Chemical Vapor Deposition
Ho VTT, Bach LG, Thanh T, Nguyen GG, Hong LS
Molecular Crystals and Liquid Crystals, 623(1), 433, 2015
2 Fabrication of m-axial InGaN nanocolumn arrays on silicon substrates using triethylgallium precursor chemical vapor deposition approach
Liu CM, Tai Y, Chen KH, Chen LC
Applied Surface Science, 299, 92, 2014
3 Influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells grown by MOCVD
Huang SJ, Fan BF, Xian YL, Zheng ZY, Wu ZS, Jiang H, Wang G
Journal of Crystal Growth, 314(1), 202, 2011
4 Pyrolysis of dimethylhydrazine and its co-pyrolysis with triethylgallium
Bourret-Courchesne E, Ye Q, Peters DW, Arnold J, Ahmed M, Irvine SJC, Kanjolia R, Smith LM, Rushworth SA
Journal of Crystal Growth, 217(1-2), 47, 2000
5 Etching of GaAs/AlGaAs by bisdimethylaminochlorarsine
Okamoto N, Tanaka H
Journal of Vacuum Science & Technology A, 16(1), 96, 1998
6 Chemical beam epitaxial growth of GaAs1-xPx on GaAs (100) substrates
Wildt D, Garcia BJ, Castano JL, Piqueras J, Pastor CJ
Journal of Vacuum Science & Technology B, 16(4), 1804, 1998
7 Reaction of Dimethylzinc and Diethylzinc on the as-Rich GaAs(100)-C(4X4) Surface
Lam HT, Venkateswaran N, Vohs JM
Journal of Vacuum Science & Technology A, 15(3), 1159, 1997
8 Low-Temperature Selective Growth of GaAs Quantum Wires by Modulated Flux Chemical Beam Epitaxy
Ro JR, Kim SB, Lee EH, Lee HT, Park SJ
Journal of Vacuum Science & Technology A, 15(3), 1340, 1997
9 Quantitative Chemical Topography of Polycrystalline Si Anisotropically Etched in Cl-2/O-2 High-Density Plasmas
Guinn KV, Cheng CC, Donnelly VM
Journal of Vacuum Science & Technology B, 13(2), 214, 1995