| 1 |
Addition of ammonia to AlH3 and BH3. Why does only aluminum form 2 : 1 adducts?
Czerw M, Goldman AS, Krogh-Jespersen K
Inorganic Chemistry, 39(2), 363, 2000 |
| 2 |
Molecularly engineered low temperature atomic layer growth of aluminum nitride on Si(100)
Liu H, Rogers JW
Journal of Vacuum Science & Technology A, 17(2), 325, 1999 |
| 3 |
Electrical properties of AlN thin films deposited at low temperature on Si(100)
Aardahl CL, Rogers JW, Yun HK, Ono Y, Tweet DJ, Hsu ST
Thin Solid Films, 346(1-2), 174, 1999 |
| 4 |
Metal-organic chemical vapor deposition of aluminum from dimethylethylamine alane
Yun JH, Kim BY, Rhee SW
Thin Solid Films, 312(1-2), 259, 1998 |
| 5 |
Aminodimethylalane (Me(2)Alnh(2)) - Matrix-Isolation and Ab-Initio Calculations
Muller J
Journal of the American Chemical Society, 118(27), 6370, 1996 |
| 6 |
The Interaction of Dimethylethylaminealane and Ammonia on Clean and Oxidized Al(111) - Atomic Layer Growth of Aluminum Nitride
Ludviksson A, Robinson DW, Rogers JW
Thin Solid Films, 289(1-2), 6, 1996 |
| 7 |
A Density-Functional Study of Borane and Alane Monoammoniate (Bh3Nh3,Alh3Nh3)
Leboeuf M, Russo N, Salahub DR, Toscano M
Journal of Chemical Physics, 103(17), 7408, 1995 |
| 8 |
Absence of Dative Bonds in bis(Ammonia)Alane
Marsh CM, Schaefer HF
Journal of Physical Chemistry, 99(39), 14309, 1995 |
| 9 |
Deposition of AlN at Lower Temperatures by Atmospheric Metalorganic Chemical-Vapor-Deposition Using Dimethylethylamine Alane and Ammonia
Kidder JN, Kuo JS, Ludviksson A, Pearsall TP, Rogers JW, Grant JM, Allen LR, Hsu ST
Journal of Vacuum Science & Technology A, 13(3), 711, 1995 |
