검색결과 : 26건
No. | Article |
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1 |
Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3. Pansila P, Kanomata K, Miura M, Ahmmad B, Kubota S, Hirose F Applied Surface Science, 357, 1920, 2015 |
2 |
Effect of Gallium Source Material on the Transparent Conducting Properties of Ga:ZnO Thin Films Through Metalorganic Chemical Vapor Deposition Ho VTT, Bach LG, Thanh T, Nguyen GG, Hong LS Molecular Crystals and Liquid Crystals, 623(1), 433, 2015 |
3 |
Characterization and reactivity of Ga+ and GaO+ cations in zeolite ZSM-5 Rane N, Overweg AR, Kazansky VB, van Santen RA, Hensen EJM Journal of Catalysis, 239(2), 478, 2006 |
4 |
Vapour pressure measurement of metal organic precursors used for MOVPE Fulem M, Ruzicka K, Ruzicka V, Simecek T, Hulicius E, Pangrac J Journal of Chemical Thermodynamics, 38(3), 312, 2006 |
5 |
Characterization of Ga/HZSM-5 and Ga/HMOR synthesized by chemical vapor deposition of trimethylgallium Garcia-Sanchez M, Magusin PCMM, Hensen EJM, Thune PC, Rozanska X, van Santen RA Journal of Catalysis, 219(2), 352, 2003 |
6 |
In situ normal incidence reflectance study on the effect of growth rate of nucleation layer on GaN by metalorganic chemical vapor deposition Kim DJ, Moon YT, Ahn KS, Park SJ Journal of Vacuum Science & Technology B, 18(1), 140, 2000 |
7 |
Improved GaN growth using a quasihot wall metal-organic chemical vapor epitaxy reactor Chung SR, Chen JC, Worchesky TL Journal of Vacuum Science & Technology A, 17(5), 3038, 1999 |
8 |
Trimethylaluminum dimer structure and its monomer radical cation : A density functional study Berthomieu D, Bacquet Y, Pedocchi L, Goursot A Journal of Physical Chemistry A, 102(40), 7821, 1998 |
9 |
Theoretical studies of CO adsorption on Si(100)-2x1 surface Bacalzo FT, Musaev DG, Lin MC Journal of Physical Chemistry B, 102(12), 2221, 1998 |
10 |
Photoluminescence studies of cadmium selenide crystals in contact with group III trialkyl derivatives Winder EJ, Kuech TF, Ellis AB Journal of the Electrochemical Society, 145(7), 2475, 1998 |