화학공학소재연구정보센터
검색결과 : 26건
No. Article
1 Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3.
Pansila P, Kanomata K, Miura M, Ahmmad B, Kubota S, Hirose F
Applied Surface Science, 357, 1920, 2015
2 Effect of Gallium Source Material on the Transparent Conducting Properties of Ga:ZnO Thin Films Through Metalorganic Chemical Vapor Deposition
Ho VTT, Bach LG, Thanh T, Nguyen GG, Hong LS
Molecular Crystals and Liquid Crystals, 623(1), 433, 2015
3 Characterization and reactivity of Ga+ and GaO+ cations in zeolite ZSM-5
Rane N, Overweg AR, Kazansky VB, van Santen RA, Hensen EJM
Journal of Catalysis, 239(2), 478, 2006
4 Vapour pressure measurement of metal organic precursors used for MOVPE
Fulem M, Ruzicka K, Ruzicka V, Simecek T, Hulicius E, Pangrac J
Journal of Chemical Thermodynamics, 38(3), 312, 2006
5 Characterization of Ga/HZSM-5 and Ga/HMOR synthesized by chemical vapor deposition of trimethylgallium
Garcia-Sanchez M, Magusin PCMM, Hensen EJM, Thune PC, Rozanska X, van Santen RA
Journal of Catalysis, 219(2), 352, 2003
6 In situ normal incidence reflectance study on the effect of growth rate of nucleation layer on GaN by metalorganic chemical vapor deposition
Kim DJ, Moon YT, Ahn KS, Park SJ
Journal of Vacuum Science & Technology B, 18(1), 140, 2000
7 Improved GaN growth using a quasihot wall metal-organic chemical vapor epitaxy reactor
Chung SR, Chen JC, Worchesky TL
Journal of Vacuum Science & Technology A, 17(5), 3038, 1999
8 Trimethylaluminum dimer structure and its monomer radical cation : A density functional study
Berthomieu D, Bacquet Y, Pedocchi L, Goursot A
Journal of Physical Chemistry A, 102(40), 7821, 1998
9 Theoretical studies of CO adsorption on Si(100)-2x1 surface
Bacalzo FT, Musaev DG, Lin MC
Journal of Physical Chemistry B, 102(12), 2221, 1998
10 Photoluminescence studies of cadmium selenide crystals in contact with group III trialkyl derivatives
Winder EJ, Kuech TF, Ellis AB
Journal of the Electrochemical Society, 145(7), 2475, 1998