| 1 |
Oxidation, grain growth and reflow characteristics of copper thin films prepared by chemical vapor deposition
Lee SY, Choi SH, Park CO
Thin Solid Films, 359(2), 261, 2000 |
| 2 |
Barrier capabilities of selective chemical vapor deposited W films and WSiN/WSix/W stacked layers against Cu diffusion
Wang MT, Chen LJ, Chen MC
Journal of the Electrochemical Society, 146(2), 728, 1999 |
| 3 |
Anionic cyclopolymerization of linked bis(vinylsilyl) monomers: Substituent control over polymer structure
Krska SW, Ueno K, Seyferth D
Macromolecules, 32(1), 1, 1999 |
| 4 |
Atomic layer epitaxy of copper - Growth and selectivity in the Cu(II)-2,2,6,6-tetramethyl-3,5-heptanedionate/H-2 process
Martensson P, Carlsson JO
Journal of the Electrochemical Society, 145(8), 2926, 1998 |
| 5 |
The role of gas-phase reactions during chemical vapor deposition of copper from (hfac)Cu(tmvs)
Chae YK, Shimogaki Y, Komiyama H
Journal of the Electrochemical Society, 145(12), 4226, 1998 |
| 6 |
Experiments on the plasma assisted chemical vapor deposition of copper
Lakshmanan SK, Gill WN
Journal of Vacuum Science & Technology A, 16(4), 2187, 1998 |
| 7 |
Reflow of copper in an oxygen ambient
Lee SY, Kim DW, Rha SK, Park CO, Park HH
Journal of Vacuum Science & Technology B, 16(5), 2902, 1998 |
| 8 |
Preparations and properties of poly(vinylsilane)s
Itoh M, Iwata K, Kobayashi M, Takeuchi R, Kabeya T
Macromolecules, 31(17), 5609, 1998 |
| 9 |
Growth rate and microstructure of copper thin films deposited with metal-organic chemical vapor deposition from hexafluoroacetylacetonate copper(I) allyltrimethylsilane
Son JH, Park MY, Rhee SW
Thin Solid Films, 335(1-2), 229, 1998 |
| 10 |
Anionic-Polymerization of Vinylsilanes .7. Effects of N,N,N’,N’-Tetramethylethylenediamine on the Polymerization of Tetravinylsilane
Suga Y, Itoh Y, Oku J, Takaki M
Polymer Bulletin, 39(3), 287, 1997 |
