검색결과 : 4건
No. | Article |
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1 |
Homoepitaxial HVPE GaN: A potential substrate for high performance devices Freitas JA, Culbertson JC, Mahadik NA, Tadjer MJ, Wu S, Raghothamachar B, Dudley M, Sochacki T, Bockowski M Journal of Crystal Growth, 500, 104, 2018 |
2 |
Optical characterization and thermal properties of CVD diamond films for integration with power electronics Nazari M, Hancock BL, Anderson J, Hobart KD, Feygelson TI, Tadjer MJ, Pate BB, Anderson TJ, Piner EL, Holtz MW Solid-State Electronics, 136, 12, 2017 |
3 |
Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films Tadjer MJ, Wheeler VD, Downey BP, Robinson ZR, Meyer DJ, Eddy CR, Kub FJ Solid-State Electronics, 136, 30, 2017 |
4 |
Thick homoepitaxial GaN with low carrier concentration for high blocking voltage Freitas JA, Mastro MA, Imhoff EA, Tadjer MJ, Eddy CR, Kub FJ Journal of Crystal Growth, 312(18), 2616, 2010 |