화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Homoepitaxial HVPE GaN: A potential substrate for high performance devices
Freitas JA, Culbertson JC, Mahadik NA, Tadjer MJ, Wu S, Raghothamachar B, Dudley M, Sochacki T, Bockowski M
Journal of Crystal Growth, 500, 104, 2018
2 Optical characterization and thermal properties of CVD diamond films for integration with power electronics
Nazari M, Hancock BL, Anderson J, Hobart KD, Feygelson TI, Tadjer MJ, Pate BB, Anderson TJ, Piner EL, Holtz MW
Solid-State Electronics, 136, 12, 2017
3 Temperature and electric field induced metal-insulator transition in atomic layer deposited VO2 thin films
Tadjer MJ, Wheeler VD, Downey BP, Robinson ZR, Meyer DJ, Eddy CR, Kub FJ
Solid-State Electronics, 136, 30, 2017
4 Thick homoepitaxial GaN with low carrier concentration for high blocking voltage
Freitas JA, Mastro MA, Imhoff EA, Tadjer MJ, Eddy CR, Kub FJ
Journal of Crystal Growth, 312(18), 2616, 2010