검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Defect structure of 4H silicon carbide ingots Lebedev AO, Avrov DD, Bulatov AV, Dorozhkin SI, Tairov YM, Fadeev AY Journal of Crystal Growth, 318(1), 394, 2011 |
| 2 |
Theoretical studies of vanadium impurity in beta-SiC Tairov YM, Reshanov SA, Parfenova II, Yuryeva EI, Ivanovskii AL Materials Science Forum, 389-3, 577, 2002 |
| 3 |
Aluminium nitride bulk crystals by sublimation method: Growth and X-ray characterization Dorozhkin SI, Lebedev AO, Maximov AY, Tairov YM Materials Science Forum, 389-3, 1453, 2002 |
| 4 |
Features of semi-insulating SiC single-crystal growth by physical vapor transport Reshanov SA, Rastegaev VP, Tairov YM Materials Science Forum, 353-356, 53, 2001 |
| 5 |
Silicon carbide substrates for epitaxial growth of aluminium nitride by chloride-transport process Avrov DD, Dorozhkin SI, Lebedev AO, Rastegaev VP, Tairov YM Materials Science Forum, 338-3, 1515, 2000 |
| 6 |
SnO2 Based Gas Sensitive Sensor Bakin AS, Bestaev MV, Dimitrov DT, Moshnikov VA, Tairov YM Thin Solid Films, 296(1-2), 168, 1997 |