검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Planar defect formation mechanism in Ge-rich SiGe-on-insulator substrates during Ge condensation process Hirashita N, Nakaharai S, Moriyama Y, Usuda K, Tezuka T, Sugiyama N, Takagi SI Thin Solid Films, 517(1), 407, 2008 |
| 2 |
Characterization of platinum gerrnanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET Ikeda K, Maeda T, Takagi SI Thin Solid Films, 508(1-2), 359, 2006 |
| 3 |
Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS Takagi SI, Mizuno T, Tezuka T, Sugiyama N, Numata T, Usuda K, Moriyama Y, Nakaharai S, Koga J, Tanabe A, Maeda T Applied Surface Science, 224(1-4), 241, 2004 |