검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Ambience effects in annealing on improvements of optical properties of GaInNAs/GaAs single quantum wells Ishizuka T, Doi H, Shimazu M, Takagishi S, Yaginuma R, Nakayama M Journal of Crystal Growth, 310(23), 4786, 2008 |
| 2 |
Optical characterization of improvement of carrier localization in InGaAsN/GaAs single quantum wells by addition of Sb flux to interfaces Iguchi Y, Ishizuka T, Yamada T, Takagishi S, Nomura K, Nakayama M Journal of Crystal Growth, 298, 540, 2007 |
| 3 |
Considerable improvement of optical property of GaInNAs/GaAs quantum well Ishizuka T, Yamada T, Iguchi Y, Saito T, Katsuyama T, Takagishi S Journal of Crystal Growth, 272(1-4), 760, 2004 |
| 4 |
Raman characterization of lattice-matched GaInAsN layers grown on GaAs (001) substrates Hashimoto A, Kitano T, Nguyen AK, Masuda A, Yamamoto A, Tanaka S, Takahashi M, Moto A, Tanabe T, Takagishi S Solar Energy Materials and Solar Cells, 75(1-2), 313, 2003 |
| 5 |
GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors Moto A, Tanaka S, Tanabe T, Takagishi S Solar Energy Materials and Solar Cells, 66(1-4), 585, 2001 |
| 6 |
Observation of compositional fluctuations in GaNAs alloys grown by metalorganic vapor-phase epitaxy Takahashi M, Moto A, Tanaka S, Tanabe T, Takagishi S, Karatani K, Nakayama M, Matsuda K, Saiki T Journal of Crystal Growth, 221, 461, 2000 |
| 7 |
Spatial distribution of deep level traps in GaNAs crystals Tanaka S, Moto A, Takahashi M, Tanabe T, Takagishi S Journal of Crystal Growth, 221, 467, 2000 |
| 8 |
Hydrogen and carbon incorporation in GaInNAs Moto A, Takahashi M, Takagishi S Journal of Crystal Growth, 221, 485, 2000 |
| 9 |
Over 27% efficiency GaAs/InGaAs mechanically stacked solar cell Matsubara H, Tanabe T, Moto A, Mine Y, Takagishi S Solar Energy Materials and Solar Cells, 50(1), 177, 1998 |