검색결과 : 1건
No. | Article |
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1 |
Etching of silicon nitride in CCl2F2, CHF3, SiF4, and SF6 reactive plasma: A comparative study Pant BD, Tandon US Plasma Chemistry and Plasma Processing, 19(4), 545, 1999 |
No. | Article |
---|---|
1 |
Etching of silicon nitride in CCl2F2, CHF3, SiF4, and SF6 reactive plasma: A comparative study Pant BD, Tandon US Plasma Chemistry and Plasma Processing, 19(4), 545, 1999 |