검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Energy band gap and optical properties of non-stoichiometric InN -theory and experiment Alexandrov D, Butcher KSA, Tansley TL Journal of Crystal Growth, 288(2), 261, 2006 |
| 2 |
High energy Urbach characteristic observed for gallium nitride amorphous surface oxide Chen PPT, Butcher KSA, Goldys EM, Tansley TL, Prince KE Thin Solid Films, 496(2), 342, 2006 |
| 3 |
High-resolution X-ray photoelectron spectroscopy of AlxGa1-xSb Ramelan AH, Butcher KSA, Goldys EM, Tansley TL Applied Surface Science, 229(1-4), 263, 2004 |
| 4 |
Gallium and oxygen accumulations on gallium nitride surfaces following argon ion milling in ultra-high vacuum conditions Butcher KSA, Afifuddin, Tansley TL, Brack N, Pigram PJ, Timmers H, Prince KE, Elliman RG Applied Surface Science, 230(1-4), 18, 2004 |
| 5 |
Piezoelectricity in indium nitride Guy IL, Zheng Z, Wintrebert-Fouquet M, Butcher KSA, Chen P, Tansley TL Journal of Crystal Growth, 269(1), 72, 2004 |
| 6 |
Multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition Motlan, Butcher KSA, Goldys EM, Tansley TL Materials Chemistry and Physics, 81(1), 8, 2003 |
| 7 |
Growth optimization of GaSb/GaAs self-assembled quantum dots grown by MOCVD Motlan, Goldys EM, Tansley TL Journal of Crystal Growth, 236(4), 621, 2002 |
| 8 |
Optical and electrical properties of InN grown by radio-frequency reactive sputtering Motlan, Goldys EM, Tansley TL Journal of Crystal Growth, 241(1-2), 165, 2002 |
| 9 |
Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers Butcher KSA, Afifuddin P, Chen PT, Godlewski M, Szczerbakow A, Goldys EM, Tansley TL, Freitas JA Journal of Crystal Growth, 246(3-4), 237, 2002 |
| 10 |
The effect of target nitridation on structural properties of InN grown by radio-frequency reactive sputtering Motlan, Goldys EM, Tansley TL Thin Solid Films, 422(1-2), 28, 2002 |