검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
On the electrical properties of Si-doped InGaP layers grown by low pressure-metalorganic vapor phase epitaxy Jakomin R, Parisini A, Tarricone L, Longo M, Fraboni B, Vantaggio S Thin Solid Films, 520(21), 6619, 2012 |
| 2 |
Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices Longo M, Parisini A, Tarricone L, Vantaggio S, Bocchi C, Germini F, Lazzarini L Journal of Crystal Growth, 311(18), 4293, 2009 |
| 3 |
Growth and characterization of manganese-doped InAsP Pristovsek M, Meissner C, Kneissl M, Jakomin R, Vantaggio S, Tarricone L Journal of Crystal Growth, 310(23), 5028, 2008 |
| 4 |
Investigation of GaAs/InGaP superlattices for quantum well solar cells Magnanini R, Tarricone L, Parisini A, Longo M, Gombia E Thin Solid Films, 516(20), 6734, 2008 |
| 5 |
Effect of the growth sequence on the properties of InGaP/GaAs/InGaP quantum wells grown by LP-MOVPE from group-V metalorganic sources Begotti M, Longo M, Magnanini R, Parisini A, Tarricone L, Bocchi C, Germini F, Lazzarini L, Nasi L, Geddo M Applied Surface Science, 222(1-4), 423, 2004 |
| 6 |
Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs Longo M, Magnanini R, Parisini A, Tarricone L, Carbognani A, Bocchi C, Gombia E Journal of Crystal Growth, 248, 119, 2003 |
| 7 |
MOVPE growth and study of InP-based materials: opportunities and challenges Pellegrino S, Tarricone L Materials Chemistry and Physics, 66(2-3), 189, 2000 |
| 8 |
Effects of inhomogeneities and ordering in InGaP/GaAs system grown by MOVPE Attolini G, Bocchi C, Germini F, Pelosi C, Parisini A, Tarricone L, Kudela R, Hasenohrl S Materials Chemistry and Physics, 66(2-3), 246, 2000 |