검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
The Viability of GeH4-Based in-Situ Clean for Low-Temperature Silicon Epitaxial-Growth Wang CL, Unnikrishnan S, Kim BY, Kwong DL, Tasch AF Journal of the Electrochemical Society, 143(7), 2387, 1996 |
| 2 |
A Monte-Carlo Binary Collision Model for Bf2 Implants into (100) Single-Crystal Silicon Yang SH, Snell CM, Morris SJ, Tian S, Parab K, Obradovich B, Morris M, Tasch AF Journal of the Electrochemical Society, 143(11), 3784, 1996 |
| 3 |
Analysis of Ultrashallow Doping Profiles Obtained by Low-Energy Ion-Implantation Parab KB, Yang SH, Morris SJ, Tian S, Tasch AF, Kamenitsa D, Simonton R, Magee C Journal of Vacuum Science & Technology B, 14(1), 260, 1996 |
| 4 |
An Examination of the Effect of Dose-Rate on Ion-Implanted Impurity Profiles in Silicon Tian S, Yang SH, Morris S, Parab K, Tasch AF, Kamenitsa D, Reece R, Freer B, Simonton RB, Magee C Journal of the Electrochemical Society, 142(9), 3215, 1995 |
| 5 |
Adsorption and Decomposition of Diethylsilane and Diethylgermane on Si(100) - Surface-Reactions for an Atomic Layer Epitaxial Approach to Column-IV Epitaxy Kellerman BK, Mahajan A, Russell NM, Ekerdt JG, Banerjee SK, Tasch AF, Campion A, White JM, Bonser DJ Journal of Vacuum Science & Technology A, 13(4), 1819, 1995 |
| 6 |
Experimental-Observations and Modeling of Ultra-Shallow Bf2 and as Implants in Single-Crystal Silicon Tasch AF, Yang SH, Morris S, Lim D Journal of Vacuum Science & Technology B, 12(1), 166, 1994 |