검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
A comparative study of the impact of Mo and stainless steel substrates on the properties of Cu(In,Ga)Se-2 based solar cells Stanley M, Jubault M, Gaiaschi S, Tempez A, Donsanti F, Naghavi N Thin Solid Films, 671, 6, 2019 |
| 2 |
Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC Suvanam SS, Usman M, Martin D, Yazdi MG, Linnarsson M, Tempez A, Gotelid M, Hallen A Applied Surface Science, 433, 108, 2018 |
| 3 |
Ga-grading and Solar Cell Capacitance Simulation of an industrial Cu(In,Ga)Se-2 solar cell produced by an in-line vacuum, all-sputtering process Bras P, Frisk C, Tempez A, Niem E, Platzer-Bjorkman C Thin Solid Films, 636, 367, 2017 |
| 4 |
Passivation behaviour of 304 stainless steel in an ionic liquid with a fluorinated anion Molchan IS, Thompson GE, Walton J, Skeldon P, Tempez A, Legendre S Applied Surface Science, 357, 37, 2015 |
| 5 |
(PIMS)-I-2 depth profile analysis of high temperature boron oxynitride dielectric films Badi N, Vijayaraghavan S, Benqaoula A, Tempez A, Tauziede C, Chapon P Applied Surface Science, 292, 1, 2014 |
| 6 |
Regulatory T Cells Increase the Avidity of Primary CD8(+) T Cell Responses and Promote Memory Pace L, Tempez A, Arnold-Schrauf C, Lemaitre F, Bousso P, Fetler L, Sparwasser T, Amigorena S Science, 338(6106), 532, 2012 |
| 7 |
Quantitative depth profile analysis of boron implanted silicon by pulsed radiofrequency glow discharge time-of-flight mass spectrometry Pisonero J, Lobo L, Bordel N, Tempez A, Bensaoula A, Badi N, Sanz-Medel A Solar Energy Materials and Solar Cells, 94(8), 1352, 2010 |
| 8 |
GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE Kim E, Rusakova I, Berishev I, Tempez A, Bensaoula A Journal of Crystal Growth, 243(3-4), 456, 2002 |
| 9 |
Characterization of TiAlN thin film annealed under O-2 by in situ time of flight direct recoil spectroscopy/mass spectroscopy of recoiled ions and ex situ x-ray photoelectron spectroscopy Tempez A, Bensaoula A, Schultz A Journal of Vacuum Science & Technology A, 20(4), 1320, 2002 |
| 10 |
Selective area growth of GaN on Si(111) by chemical beam epitaxy Kim E, Tempez A, Medelci N, Berishev I, Bensaoula A Journal of Vacuum Science & Technology A, 18(4), 1130, 2000 |