검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Influence of the deposition temperature on the performance of microcrystalline silicon thin film transistors Oudwan M, Abramov A, Cabarrocas PRI, Templier F Solid-State Electronics, 52(3), 432, 2008 |
| 2 |
1/f noise characterization of amorphous/nanocrystalline silicon bilayer thin-film transistors Hatzopoulos AT, Arpatzanis N, Tassis DH, Dimitriadis CA, Templier F, Oudwan M, Kamarinos G Solid-State Electronics, 51(5), 726, 2007 |
| 3 |
Mechanical integrity analysis of multilayer insulator coatings on flexible steel substrates Plojoux J, Leterrier Y, Manson JAE, Templier F Thin Solid Films, 515(17), 6890, 2007 |
| 4 |
Polysilicon high frequency devices for large area electronics: Characterization, simulation and modeling Botrel JL, Savry O, Rozeau O, Templier F, Jomaah J Thin Solid Films, 515(19), 7422, 2007 |
| 5 |
Fabrication of high perfonnance low temperature poly-silicon backlanes on metal foil for flexible active-matrix organic light emission diode displays Templier F, Aventurier B, Demars P, Botrel JL, Martin P Thin Solid Films, 515(19), 7428, 2007 |
| 6 |
Electrical stability in self-aligned p-channel polysilicon thin film transistors Gaucci P, Mariucci L, Valletta A, Pecora A, Fortunato G, Templier F Thin Solid Films, 515(19), 7571, 2007 |
| 7 |
Influence of process steps on the performance of microcrystalline silicon thin film transistors Oudwan M, Djeridane Y, Abramov A, Aventurier B, Cabarrocas PRI, Templier F Thin Solid Films, 515(19), 7662, 2007 |
| 8 |
QuaSiC Smart-Cut (R) substrates for SiC high power devices Letertre F, Jalaguier E, Di Cioccio L, Templier F, Bluet JM, Banc C, Matko I, Chenevier B, Bano E, Guillot G, Billon T, Aspar B, Madar R, Ghyselen B Materials Science Forum, 389-3, 151, 2002 |
| 9 |
Investigation of structural defects during 4H-SiC Schottky diode processing by synchrotron topography Pernot E, Neyret E, Moulin C, Pernot-Rejmankova P, Templier F, Di Cioccio L, Billon T, Madar R Materials Science Forum, 389-3, 419, 2002 |
| 10 |
Development of 600 V/8 A SiC Schottky diodes with epitaxial edge termination Templier F, Ferret P, Di Cioccio L, Collard E, Lhorte A, Billon T Materials Science Forum, 389-3, 1161, 2002 |