화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Quantum-state-selective electron recombination studies suggest enhanced abundance of primordial HeH+
Novotny O, Wilhelm P, Paul D, Kalosi A, Saurabh S, Becker A, Blaum K, George S, Gock J, Grieser M, Grussie F, von Hahn R, Krantz C, Kreckel H, Meyer C, Mishra PM, Muell D, Nuesslein F, Orlov DA, Rimmler M, Schmidt VC, Shornikov A, Terekhov AS, Vogel S, Zajfman D, Wolf A
Science, 365(6454), 676, 2019
2 Monte Carlo simulation of GaAs(001) surface smoothing in equilibrium conditions
Kazantsev DM, Akhundov IO, Karpov AN, Shwartz NL, Alperovich VL, Terekhov AS, Latyshev AV
Applied Surface Science, 333, 141, 2015
3 Kinetics of atomic smoothing GaAs(001) surface in equilibrium conditions
Akhundov IO, Alperovich VL, Latyshev AV, Terekhov AS
Applied Surface Science, 269, 2, 2013
4 New reconstruction-stoichiometry correlation for GaAs(001) surface treated by atomic hydrogen
Toropetsky KV, Tereshchenko OE, Petukhov DA, Terekhov AS
Applied Surface Science, 254(24), 8041, 2008
5 Surface passivation and morphology of GaAs(100) treated in HCl-isopropanol solution
Alperovich VL, Tereshchenko OE, Rudaya NS, Sheglov DV, Latyshev AV, Terekhov AS
Applied Surface Science, 235(3), 249, 2004
6 Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(100) and (111)
Alperovich VL, Tereshchenko OE, Litvinov AN, Terekhov AS
Applied Surface Science, 175, 175, 2001
7 Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces
Tereshchenko OE, Chikichev SI, Terekhov AS
Journal of Vacuum Science & Technology A, 17(5), 2655, 1999