검색결과 : 7건
No. | Article |
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1 |
Quantum-state-selective electron recombination studies suggest enhanced abundance of primordial HeH+ Novotny O, Wilhelm P, Paul D, Kalosi A, Saurabh S, Becker A, Blaum K, George S, Gock J, Grieser M, Grussie F, von Hahn R, Krantz C, Kreckel H, Meyer C, Mishra PM, Muell D, Nuesslein F, Orlov DA, Rimmler M, Schmidt VC, Shornikov A, Terekhov AS, Vogel S, Zajfman D, Wolf A Science, 365(6454), 676, 2019 |
2 |
Monte Carlo simulation of GaAs(001) surface smoothing in equilibrium conditions Kazantsev DM, Akhundov IO, Karpov AN, Shwartz NL, Alperovich VL, Terekhov AS, Latyshev AV Applied Surface Science, 333, 141, 2015 |
3 |
Kinetics of atomic smoothing GaAs(001) surface in equilibrium conditions Akhundov IO, Alperovich VL, Latyshev AV, Terekhov AS Applied Surface Science, 269, 2, 2013 |
4 |
New reconstruction-stoichiometry correlation for GaAs(001) surface treated by atomic hydrogen Toropetsky KV, Tereshchenko OE, Petukhov DA, Terekhov AS Applied Surface Science, 254(24), 8041, 2008 |
5 |
Surface passivation and morphology of GaAs(100) treated in HCl-isopropanol solution Alperovich VL, Tereshchenko OE, Rudaya NS, Sheglov DV, Latyshev AV, Terekhov AS Applied Surface Science, 235(3), 249, 2004 |
6 |
Evolution of interface excitations under phase transition in two-dimensional layer of Cs on GaAs(100) and (111) Alperovich VL, Tereshchenko OE, Litvinov AN, Terekhov AS Applied Surface Science, 175, 175, 2001 |
7 |
Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces Tereshchenko OE, Chikichev SI, Terekhov AS Journal of Vacuum Science & Technology A, 17(5), 2655, 1999 |